Thermal Stability of Neodymium Aluminates High-κ Dielectric Deposited by Liquid Injection MOCVD Using Single-Source Heterometallic Alkoxide Precursors

Thin films of neodymium aluminate (NdAlOx) have been deposited by liquid injection metalorganic chemical vapor deposition (MOCVD) using the bimetallic alkoxide precursor [NdAl(OPri)6(PriOH)]2. The effects of high-temperature postdeposition annealing on NdAlOx thin films are reported. The as-deposite...

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Published in:Journal of nanomaterials 2012-01, Vol.2012 (2012), p.1-4
Main Authors: Chen, Susu, Jones, A. C., Gaskell, J. M., Chalker, P. R., Werner, M., Taylor, S., Zhao, Ce Zhou, Taechakumput, P., Aspinall, H. C.
Format: Article
Language:English
Subjects:
Alkoxides
Aluminates
Annealing
Deposition
Dielectrics
Liquid injection
Precursors
Thin films
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cited_by cdi_FETCH-LOGICAL-c291t-72f7d0fad8c791f028cdc9f68b007b8322a9ee3b1dbb40f36f4b944a072e100e3
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container_issue 2012
container_start_page 1
container_title Journal of nanomaterials
container_volume 2012
creator Chen, Susu
Jones, A. C.
Gaskell, J. M.
Chalker, P. R.
Werner, M.
Taylor, S.
Zhao, Ce Zhou
Taechakumput, P.
Aspinall, H. C.
description Thin films of neodymium aluminate (NdAlOx) have been deposited by liquid injection metalorganic chemical vapor deposition (MOCVD) using the bimetallic alkoxide precursor [NdAl(OPri)6(PriOH)]2. The effects of high-temperature postdeposition annealing on NdAlOx thin films are reported. The as-deposited thin films are amorphous in nature. X-ray diffraction (XRD) and medium energy ion scattering (MEIS) show, respectively, no crystallization or interdiffusion of metal ions into the substrate after annealing at 950°C. The capacitance-voltage (C-V) and current-voltage (I-V) characteristics of the thin films exhibited good electrical integrity following annealing. The dielectric permittivity (κ) of the annealed NdAlOx was 12, and a density of interface states at flatband (Dit) of 4.01×1011 cm−2 eV−1 was measured. The deposited NdAlOx thin films are shown to be able to endure high-temperature stress and capable of maintaining excellent dielectric properties.
doi_str_mv 10.1155/2012/891079
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C. ; Gaskell, J. M. ; Chalker, P. R. ; Werner, M. ; Taylor, S. ; Zhao, Ce Zhou ; Taechakumput, P. ; Aspinall, H. C.</creator><contributor>Maneshian, Mohammad H.</contributor><creatorcontrib>Chen, Susu ; Jones, A. C. ; Gaskell, J. M. ; Chalker, P. R. ; Werner, M. ; Taylor, S. ; Zhao, Ce Zhou ; Taechakumput, P. ; Aspinall, H. C. ; Maneshian, Mohammad H.</creatorcontrib><description>Thin films of neodymium aluminate (NdAlOx) have been deposited by liquid injection metalorganic chemical vapor deposition (MOCVD) using the bimetallic alkoxide precursor [NdAl(OPri)6(PriOH)]2. The effects of high-temperature postdeposition annealing on NdAlOx thin films are reported. The as-deposited thin films are amorphous in nature. X-ray diffraction (XRD) and medium energy ion scattering (MEIS) show, respectively, no crystallization or interdiffusion of metal ions into the substrate after annealing at 950°C. 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subjects Alkoxides
Aluminates
Annealing
Deposition
Dielectrics
Liquid injection
Precursors
Thin films
title Thermal Stability of Neodymium Aluminates High-κ Dielectric Deposited by Liquid Injection MOCVD Using Single-Source Heterometallic Alkoxide Precursors
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