Memristive tri-stable resistive switching at ruptured conducting filaments of a Pt/TiO sub(2)/Pt cell

A tri-stable memristive switching was demonstrated on a Pt/TiO sub(2)/Pt device and its underlying mechanism was suggested through a series of electrical measurements. Tri-stable switching could be initiated from a device in unipolar reset status. The unipolar reset status was obtained by performing...

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Bibliographic Details
Published in:Nanotechnology 2012-05, Vol.23 (18), p.185202-1-8
Main Authors: Yoon, K J, Lee, M H, Kim, G H, Song, S J, Seok, J Y, Han, S, Yoon, J H, Kim, K M, Hwang, C S
Format: Article
Language:English
Subjects:
Devices
Electroforming
Filaments
Migration
Modulation
Platinum
Switching
Titanium dioxide
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Summary:A tri-stable memristive switching was demonstrated on a Pt/TiO sub(2)/Pt device and its underlying mechanism was suggested through a series of electrical measurements. Tri-stable switching could be initiated from a device in unipolar reset status. The unipolar reset status was obtained by performing an electroforming step on a pristine cell which was then followed by unipolar reset switching. It was postulated that tri-stable switching occurred at the location where the conductive filament (initially formed by the electroforming step) was ruptured by a subsequent unipolar reset process. The mechanism of the tri-stable memristive switching presented in this article was attributed to the migration of oxygen ions through the ruptured filament region and the resulting modulation of the Schottky-like interfaces. The assertion was further supported by a comparison study performed on a Pt/TiO sub(2)/TiO sub(2-x)/Pt cell.
ISSN:0957-4484
DOI:10.1088/0957-4484/23/18/185202