Synthesis, crystal structure and photoluminescence of a new Eu-doped Sr containing sialon (Sr0.94Eu0.06)(Al0.3Si0.7)4(N0.8O0.2)6

• Published in: Journal of solid state chemistry 2012-06, Vol.190, p.264-270
• Main Authors: Yamane, Hisanori, Shimooka, Satoshi, Uheda, Kyota
• Format: Article
• Language: English
• Subjects: Aluminum silicon oxynitride; Condensed matter: electronic structure, electrical, magnetic, and optical properties; Condensed matter: structure, mechanical and thermal properties; Crystal structure; Crystal structure elucidation; Crystalline state (including molecular motions in solids); Defects and impurities in crystals; microstructure; Diffraction; Double layer; Exact sciences and technology; Luminescence; Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation; Photoluminescence; Physics; Reflection; Sialon; Stacking faults; Stacking faults and other planar or extended defects; Strontium; Structure of solids and liquids; crystallography; Structure of specific crystalline solids; Theory of crystal structure, crystal symmetry; calculations and modeling; Tool steels; Unit cell; X-rays
• ISSN: 0022-4596; 1095-726X
• DOI: 10.1016/j.jssc.2012.02.055

Colorless transparent platelet single crystals of a novel Eu2+-doped strontium silicon aluminum oxynitride, (Sr0.94Eu0.06)(Al0.3Si0.7)4(N0.8O0.2)6, were prepared at 1800°C and 0.92MPa of N2. Fundamental reflections of electron and X-ray diffraction of the crystals were indexed with a face-centered orthorhombic unit cell (a=5.8061(5)Å, b=37.762(3)Å, c=9.5936(9)Å). Diffuse streaks elongated in the b-axis direction were observed around the fundamental reflections hkl with h=2n+1 of the electron and X-ray diffraction, indicating stacking faults of (010)[100]/2. A crystal structure model without the stacking faults was obtained using the X-ray diffraction data of the fundamental reflections with the space group Fdd2. A SiN4-tetrahedron double layer of [SiN2]2 and a Sr/Eu double layer of [(Sr0.94Eu0.06)Al1.2Si0.8N0.8 O1.2]2 are stacked alternately along the b-axis direction. The title compound showed an emission with a peak wavelength of 490nm under 334nm excitation at room temperature. Single crystals of a novel Eu2+-doped strontium silicon aluminum oxynitride, (Sr0.94Eu0.06)(Al0.3Si0.7)4(N0.8O0.2)6, having stacking faults on the (010) plane of an orthorhombic cell, were prepared at 1800°C and 0.92MPa of N2. The compound showed emission with a peak wavelength of 490nm under 334nm excitation at room temperature. [Display omitted] ► A new compound Eu2+-doped (Sr0.94Eu0.06)(Al0.3Si0.7)4(N0.8O0.2)6 was prepared. ► Stacking faults in the compound were clarified by electron and X-ray diffraction. ► A basic crystal structure model was obtained based on the X-ray diffraction data. ► An emission of 490nm under 334nm excitation at room temperature was observed.