On the effects of NBTI degradation in p-MOSFET devices

This paper presents the effects of interface trap concentration and threshold voltage shift on NBTI degradation in p-MOSFETs. To explore the degradation mechanisms, transistors having an EOT of 1.1nm and 5nm were simulated by applying various stress conditions. The NBTI degradation mechanism was stu...

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Bibliographic Details
Published in:Physica. B, Condensed matter Condensed matter, 2012-08, Vol.407 (15), p.3031-3033
Main Authors: Hussin, H., Soin, N., Karim, N.M., Wan Muhamad Hatta, S.F.
Format: Article
Language:English
Subjects:
Applied sciences
Condensed matter
Degradation
Doping
Effective oxide thickness
Electric potential
Electronics
Exact sciences and technology
Interface trap generation
NBTI
Niobium base alloys
R-D Model
Reliability
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Simulation
Threshold voltage
Threshold voltage shift
Transistors
Voltage
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Summary:This paper presents the effects of interface trap concentration and threshold voltage shift on NBTI degradation in p-MOSFETs. To explore the degradation mechanisms, transistors having an EOT of 1.1nm and 5nm were simulated by applying various stress conditions. The NBTI degradation mechanism was studied by varying the gate voltage, temperature and substrate doping level. The simulations show NBTI degradation in terms of the threshold voltage shift, ΔVth and number of interface traps, ΔNit. The simulation results show an improved degradation trend in terms of ΔVth and ΔNit when the substrate doping level is increased.
ISSN:0921-4526
1873-2135
DOI:10.1016/j.physb.2011.09.048