Effect of localised charges on nanoscale cylindrical surrounding gate MOSFET: Analog performance and linearity analysis

The paper presents a simulation study of Nanoscale Cylindrical Surrounding Gate (SRG) MOSFET with localised interface charges. The objective of the present work is to study the performance degradation due to hot carrier induced/radiation induced/stress induced damage in the form of localised/fixed c...

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Bibliographic Details
Published in:Microelectronics and reliability 2012-06, Vol.52 (6), p.989-994
Main Authors: Gautam, Rajni, Saxena, Manoj, Gupta, R.S., Gupta, Mridula
Format: Article
Language:English
Subjects:
Applied sciences
Devices
Electronics
Exact sciences and technology
Gates (circuits)
Linearity
MOSFETs
Nanomaterials
Nanostructure
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Semiconductors
Simulation
Transistors
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Summary:The paper presents a simulation study of Nanoscale Cylindrical Surrounding Gate (SRG) MOSFET with localised interface charges. The objective of the present work is to study the performance degradation due to hot carrier induced/radiation induced/stress induced damage in the form of localised/fixed charges at the semiconductor/oxide interface of the device. Impact of fixed charges has been studied on the characteristics such as drain current, transconductance and its higher order terms, device efficiency and linearity FOMs. Effect of nature and extension of interface fixed charges has been discussed in detail through extensive simulation. Circuit reliability issues of the device are discussed in terms of DC bias point degradation.
ISSN:0026-2714
1872-941X
DOI:10.1016/j.microrel.2011.12.014