The study of graphite disordering using the temperature dependence of ion-induced electron emission

The temperature dependences of ion-induced electron emission yield γ(T) under 6–30 keV N2+, Ne+, Ar+ and 15 keV N+ high-fluence ion irradiation of polycrystalline graphite at normal ion incidence have been analyzed to trace the structure change dependence depending on irradiation temperature and the...

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Bibliographic Details
Published in:Vacuum 2012-04, Vol.86 (10), p.1630-1633
Main Authors: Andrianova, N.N., Avilkina, V.S., Borisov, A.M., Mashkova, E.S., Parilis, E.S.
Format: Article
Language:English
Subjects:
Atomic structure
Displacements (lattice)
Electron emission
Graphite
High-fluence ion irradiation
Ion irradiation
Ion-induced electron emission
Irradiation
Lattices
Radiation damage in carbon-based materials
Temperature dependence
Threshold level of radiation damage
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Summary:The temperature dependences of ion-induced electron emission yield γ(T) under 6–30 keV N2+, Ne+, Ar+ and 15 keV N+ high-fluence ion irradiation of polycrystalline graphite at normal ion incidence have been analyzed to trace the structure change dependence depending on irradiation temperature and the level of radiation damage v measured in dpa (displacements per atom). It has been found that, under irradiation at room temperature, the threshold value for graphite lattice disordering equals vd ≈ 60 dpa for noble gas ions (Ar+, Ne+) and νd ≈ 40 dpa for N2+.
ISSN:0042-207X
1879-2715
DOI:10.1016/j.vacuum.2011.12.010