AlN homoepitaxial growth on sublimation-AlN substrate by low-pressure HVPE

• Published in: Journal of crystal growth 2012-07, Vol.350 (1), p.69-71
• Main Authors: Nomura, Takuya, Okumura, Kenta, Miyake, Hideto, Hiramatsu, Kazumasa, Eryu, Osamu, Yamada, Yoichi
• Format: Article
• Language: English
• Subjects: A2. Homoepitaxial growth; A3. HVPE; Aluminum nitride; B1. AlN; Condensed matter: structure, mechanical and thermal properties; Cracks; Cross-disciplinary physics: materials science; rheology; Crystal growth; Diffraction; Exact sciences and technology; Growth from vapor; Impurities; Materials science; Methods of crystal growth; physics of crystal growth; Methods of deposition of films and coatings; film growth and epitaxy; Physics; Secondary ion mass spectrometry; Silicon substrates; Structure of solids and liquids; crystallography; Structure of specific crystalline solids; Tensile stress; Vapor phase epitaxy; growth from vapor phase
• ISSN: 0022-0248; 1873-5002
• DOI: 10.1016/j.jcrysgro.2011.12.025

Crack-free thick AlN layers with low impurity concentrations were grown on free-standing AlN substrates fabricated by a sublimation method. Cracks due to tensile stresses were generated in the overgrowth layer when using on-axis AlN (0001) substrates, as indicated by Raman scattering spectroscopy. In contrast, cracks were not generated when using 5° off-angle AlN (0001) substrates. High crystalline quality was indicated by X-ray rocking curve (XRC) analysis. The full width at half maximum (FWHM) values of the (0002) and (10–10) diffractions were 277 and 306arcsec, respectively. Secondary ion mass spectrometry (SIMS) measurements indicated that the Si and C impurity concentrations were reduced to half of those in the sublimation-grown AlN substrates.