Comparative first-principle analysis of un-doped and V3+-doped [alpha]-ZnAl2S4 spinel

The experimental and theoretical studies of the optical properties of pure [alpha]-ZnAl2S4 and [alpha]-ZnAl2S4: V3+ crystals were carried out. The ab initio and crystal field calculations of the structural and optical properties of [alpha]-ZnAl2S4: V3+ were compared with the corresponding experiment...

Full description

Saved in:
Bibliographic Details
Published in:Journal of luminescence 2012-09, Vol.132 (9), p.2489-2494
Main Authors: Brik, M G, Nazarov, M, Ahmad-Fauzi, M N, Kulyuk, L, Anghel, S, Sushkevich, K, Boulon, G
Format: Article
Language:English
Subjects:
Band structure of solids
Crystal structure
Crystals
Electronics
Energy levels
Luminescence
Mathematical analysis
Optical properties
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
cited_by
cites
container_end_page 2494
container_issue 9
container_start_page 2489
container_title Journal of luminescence
container_volume 132
creator Brik, M G
Nazarov, M
Ahmad-Fauzi, M N
Kulyuk, L
Anghel, S
Sushkevich, K
Boulon, G
description The experimental and theoretical studies of the optical properties of pure [alpha]-ZnAl2S4 and [alpha]-ZnAl2S4: V3+ crystals were carried out. The ab initio and crystal field calculations of the structural and optical properties of [alpha]-ZnAl2S4: V3+ were compared with the corresponding experimental data. It was shown that the lowest vanadium 3d states are located at about 1.36 eV above the valence band's top. The complete energy level scheme of the [alpha]-ZnAl2S4: V3+ system, which includes the host's electronic band structure and impurity ion's energy levels, was suggested on the basis of the performed calculations.
doi_str_mv 10.1016/j.jlumin.2012.04.044
format article
fullrecord <record><control><sourceid>proquest</sourceid><recordid>TN_cdi_proquest_miscellaneous_1038253661</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>1038253661</sourcerecordid><originalsourceid>FETCH-proquest_miscellaneous_10382536613</originalsourceid><addsrcrecordid>eNqVjMsKwjAURLNQ8PkHLrIUpPUmqUWXIop7HwtFJNgUU26T2NsK_r1d-APCwHCGwzA2ERALEOm8iAtsSutiCULGkLRJOqwPIGUklVA9NiAqAECtlqs-O218GXSla_s2PLcV1VGorHvYgIZrp_FDlrjPeeOizAeTtWPGz2r2o6vG8NS36OLWKA8Jp2CdwRHr5hrJjH89ZNPd9rjZt9_-1Riq76Wlh0HUzviG7gLUUi5Umgr1h_oFA55KWw</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>1038253661</pqid></control><display><type>article</type><title>Comparative first-principle analysis of un-doped and V3+-doped [alpha]-ZnAl2S4 spinel</title><source>ScienceDirect Journals</source><creator>Brik, M G ; Nazarov, M ; Ahmad-Fauzi, M N ; Kulyuk, L ; Anghel, S ; Sushkevich, K ; Boulon, G</creator><creatorcontrib>Brik, M G ; Nazarov, M ; Ahmad-Fauzi, M N ; Kulyuk, L ; Anghel, S ; Sushkevich, K ; Boulon, G</creatorcontrib><description>The experimental and theoretical studies of the optical properties of pure [alpha]-ZnAl2S4 and [alpha]-ZnAl2S4: V3+ crystals were carried out. The ab initio and crystal field calculations of the structural and optical properties of [alpha]-ZnAl2S4: V3+ were compared with the corresponding experimental data. It was shown that the lowest vanadium 3d states are located at about 1.36 eV above the valence band's top. The complete energy level scheme of the [alpha]-ZnAl2S4: V3+ system, which includes the host's electronic band structure and impurity ion's energy levels, was suggested on the basis of the performed calculations.</description><identifier>ISSN: 0022-2313</identifier><identifier>DOI: 10.1016/j.jlumin.2012.04.044</identifier><language>eng</language><subject>Band structure of solids ; Crystal structure ; Crystals ; Electronics ; Energy levels ; Luminescence ; Mathematical analysis ; Optical properties</subject><ispartof>Journal of luminescence, 2012-09, Vol.132 (9), p.2489-2494</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27924,27925</link.rule.ids></links><search><creatorcontrib>Brik, M G</creatorcontrib><creatorcontrib>Nazarov, M</creatorcontrib><creatorcontrib>Ahmad-Fauzi, M N</creatorcontrib><creatorcontrib>Kulyuk, L</creatorcontrib><creatorcontrib>Anghel, S</creatorcontrib><creatorcontrib>Sushkevich, K</creatorcontrib><creatorcontrib>Boulon, G</creatorcontrib><title>Comparative first-principle analysis of un-doped and V3+-doped [alpha]-ZnAl2S4 spinel</title><title>Journal of luminescence</title><description>The experimental and theoretical studies of the optical properties of pure [alpha]-ZnAl2S4 and [alpha]-ZnAl2S4: V3+ crystals were carried out. The ab initio and crystal field calculations of the structural and optical properties of [alpha]-ZnAl2S4: V3+ were compared with the corresponding experimental data. It was shown that the lowest vanadium 3d states are located at about 1.36 eV above the valence band's top. The complete energy level scheme of the [alpha]-ZnAl2S4: V3+ system, which includes the host's electronic band structure and impurity ion's energy levels, was suggested on the basis of the performed calculations.</description><subject>Band structure of solids</subject><subject>Crystal structure</subject><subject>Crystals</subject><subject>Electronics</subject><subject>Energy levels</subject><subject>Luminescence</subject><subject>Mathematical analysis</subject><subject>Optical properties</subject><issn>0022-2313</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2012</creationdate><recordtype>article</recordtype><recordid>eNqVjMsKwjAURLNQ8PkHLrIUpPUmqUWXIop7HwtFJNgUU26T2NsK_r1d-APCwHCGwzA2ERALEOm8iAtsSutiCULGkLRJOqwPIGUklVA9NiAqAECtlqs-O218GXSla_s2PLcV1VGorHvYgIZrp_FDlrjPeeOizAeTtWPGz2r2o6vG8NS36OLWKA8Jp2CdwRHr5hrJjH89ZNPd9rjZt9_-1Riq76Wlh0HUzviG7gLUUi5Umgr1h_oFA55KWw</recordid><startdate>20120901</startdate><enddate>20120901</enddate><creator>Brik, M G</creator><creator>Nazarov, M</creator><creator>Ahmad-Fauzi, M N</creator><creator>Kulyuk, L</creator><creator>Anghel, S</creator><creator>Sushkevich, K</creator><creator>Boulon, G</creator><scope>7SP</scope><scope>7U5</scope><scope>8FD</scope><scope>L7M</scope></search><sort><creationdate>20120901</creationdate><title>Comparative first-principle analysis of un-doped and V3+-doped [alpha]-ZnAl2S4 spinel</title><author>Brik, M G ; Nazarov, M ; Ahmad-Fauzi, M N ; Kulyuk, L ; Anghel, S ; Sushkevich, K ; Boulon, G</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-proquest_miscellaneous_10382536613</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2012</creationdate><topic>Band structure of solids</topic><topic>Crystal structure</topic><topic>Crystals</topic><topic>Electronics</topic><topic>Energy levels</topic><topic>Luminescence</topic><topic>Mathematical analysis</topic><topic>Optical properties</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Brik, M G</creatorcontrib><creatorcontrib>Nazarov, M</creatorcontrib><creatorcontrib>Ahmad-Fauzi, M N</creatorcontrib><creatorcontrib>Kulyuk, L</creatorcontrib><creatorcontrib>Anghel, S</creatorcontrib><creatorcontrib>Sushkevich, K</creatorcontrib><creatorcontrib>Boulon, G</creatorcontrib><collection>Electronics &amp; Communications Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Journal of luminescence</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Brik, M G</au><au>Nazarov, M</au><au>Ahmad-Fauzi, M N</au><au>Kulyuk, L</au><au>Anghel, S</au><au>Sushkevich, K</au><au>Boulon, G</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Comparative first-principle analysis of un-doped and V3+-doped [alpha]-ZnAl2S4 spinel</atitle><jtitle>Journal of luminescence</jtitle><date>2012-09-01</date><risdate>2012</risdate><volume>132</volume><issue>9</issue><spage>2489</spage><epage>2494</epage><pages>2489-2494</pages><issn>0022-2313</issn><abstract>The experimental and theoretical studies of the optical properties of pure [alpha]-ZnAl2S4 and [alpha]-ZnAl2S4: V3+ crystals were carried out. The ab initio and crystal field calculations of the structural and optical properties of [alpha]-ZnAl2S4: V3+ were compared with the corresponding experimental data. It was shown that the lowest vanadium 3d states are located at about 1.36 eV above the valence band's top. The complete energy level scheme of the [alpha]-ZnAl2S4: V3+ system, which includes the host's electronic band structure and impurity ion's energy levels, was suggested on the basis of the performed calculations.</abstract><doi>10.1016/j.jlumin.2012.04.044</doi></addata></record>
fulltext fulltext
identifier ISSN: 0022-2313
ispartof Journal of luminescence, 2012-09, Vol.132 (9), p.2489-2494
issn 0022-2313
language eng
recordid cdi_proquest_miscellaneous_1038253661
source ScienceDirect Journals
subjects Band structure of solids
Crystal structure
Crystals
Electronics
Energy levels
Luminescence
Mathematical analysis
Optical properties
title Comparative first-principle analysis of un-doped and V3+-doped [alpha]-ZnAl2S4 spinel
url http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-04T06%3A07%3A17IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Comparative%20first-principle%20analysis%20of%20un-doped%20and%20V3+-doped%20%5Balpha%5D-ZnAl2S4%20spinel&rft.jtitle=Journal%20of%20luminescence&rft.au=Brik,%20M%20G&rft.date=2012-09-01&rft.volume=132&rft.issue=9&rft.spage=2489&rft.epage=2494&rft.pages=2489-2494&rft.issn=0022-2313&rft_id=info:doi/10.1016/j.jlumin.2012.04.044&rft_dat=%3Cproquest%3E1038253661%3C/proquest%3E%3Cgrp_id%3Ecdi_FETCH-proquest_miscellaneous_10382536613%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_pqid=1038253661&rft_id=info:pmid/&rfr_iscdi=true