High Thermal Responsiveness of a Reduced Graphene Oxide Field-Effect Transistor

A reduced graphene oxide field‐effect transistor (R‐GO FET) device has a uniform self‐assembled and networked channel of R‐GO nanosheets that are highly responsive to physical stimuli such as temperature variations and infrared irradiation. The charge‐transport mechanisms of the networked R‐GO thin...

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Bibliographic Details
Published in:Advanced materials (Weinheim) 2012-10, Vol.24 (38), p.5254-5260
Main Authors: Trung, Tran Quang, Tien, Nguyen Thanh, Kim, Doil, Jung, Jin Heak, Yoon, Ok Ja, Lee, Nae-Eung
Format: Article
Language:English
Subjects:
field-effect transistors
Graphite - chemistry
Nanostructures - chemistry
Oxides - chemistry
reduced graphene oxide
sensors
Temperature
thermal responsiveness
Transistors, Electronic
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Summary:A reduced graphene oxide field‐effect transistor (R‐GO FET) device has a uniform self‐assembled and networked channel of R‐GO nanosheets that are highly responsive to physical stimuli such as temperature variations and infrared irradiation. The charge‐transport mechanisms of the networked R‐GO thin film include charge tunneling through the nanosheet junction and charge‐hopping transport. Under a thermal or infrared (IR) stimulus, the charge carriers generated by thermal or IR activation contribute to changes in the charge transport inside the networked R‐GO thin film.
ISSN:0935-9648
1521-4095
DOI:10.1002/adma.201201724