Characterisation of n-type g-CuCl on Si for UV optoelectronic applications

The use of co-evaporation of ZnCl sub(2) with CuCl in order to achieve n-type conductivity in CuCl is reported herein. Linear current-voltage (IV) characteristics in the range of c4 V have been measured using Cu-Au electrical contacts. Room temperature Hall effect measurements show some evidence of...

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Published in:Journal of materials science. Materials in electronics 2007-10, Vol.18, p.57-60
Main Authors: O'Reilly, L, Mitra, A, Lucas, F O, Natarajan, Gomathi, McNally, P J, Daniels, S, Lankinen, A, Lowney, D, Bradley, AL, Cameron, D C
Format: Article
Language:English
Subjects:
Capping
Carrier density
Conductivity
Copper
Electronics
Excitation
Materials science
Resistivity
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container_title Journal of materials science. Materials in electronics
container_volume 18
creator O'Reilly, L
Mitra, A
Lucas, F O
Natarajan, Gomathi
McNally, P J
Daniels, S
Lankinen, A
Lowney, D
Bradley, AL
Cameron, D C
description The use of co-evaporation of ZnCl sub(2) with CuCl in order to achieve n-type conductivity in CuCl is reported herein. Linear current-voltage (IV) characteristics in the range of c4 V have been measured using Cu-Au electrical contacts. Room temperature Hall effect measurements show some evidence of a mixed conduction mechanism. On average the samples exhibit n-type conductivity with a bulk electron carrier concentration n 61 x 10 super(16) cm super(-3) and Hall mobility k 6 29 cm super(2)v super(-1)s super(-1) for a CuCl sample doped with a nominal 3 mole % ZnCl sub(2). By use of an in situ CaF sub(2) capping layer, transmission >90% is achieved. At room temperature a strong Z sub(3) free excitonic emission occurs at 6385 nm using both photoluminescence and x-ray excited optical luminescence, indicating the high optical quality of the doped material.
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subjects Capping
Carrier density
Conductivity
Copper
Electronics
Excitation
Materials science
Resistivity
title Characterisation of n-type g-CuCl on Si for UV optoelectronic applications
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