Germanium enhanced large-grain growth by pulse mode rapid thermal crystallization process

The large-grain crystallization for silicon film was implemented by doping germanium in silicon film and using a rapid thermal process with near-infrared illumination. Germanium atoms acted as nuclei for crystallization of the amorphous silicon film. Because the germanium embedded in silicon film co...

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Bibliographic Details
Published in:Journal of materials science. Materials in electronics 2007-05, Vol.18 (5), p.475-480
Main Authors: LIN, Chiung-Wei, CHANG, Pao-An, LEE, Yeong-Shyang
Format: Article
Language:English
Subjects:
Applied sciences
Circuit properties
Crystallization
Electric, optical and optoelectronic circuits
Electronics
Exact sciences and technology
Grain growth
Grain size
Illumination
Infrared
Integrated optics. Optical fibers and wave guides
Optical and optoelectronic circuits
Silicon films
Thermal conductivity
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Summary:The large-grain crystallization for silicon film was implemented by doping germanium in silicon film and using a rapid thermal process with near-infrared illumination. Germanium atoms acted as nuclei for crystallization of the amorphous silicon film. Because the germanium embedded in silicon film could absorb infrared photonic energy and convert it into thermal energy. Due to the low thermal conductivity of germanium, the absorbed energy remained in the germanium-doped film for a long time and helped the grain growth. With the amount of germanium in silicon film increased, a large grain will be obtained readily. A grain size of 3.92 μm was achieved in germanium-doped film.[PUBLICATION ABSTRACT]
ISSN:0957-4522
1573-482X
DOI:10.1007/s10854-006-9066-7