Effect of Ho Content on Microstructure and Ferroelectric Properties of Bi sub(4-x)Ho sub(x)Ti sub(3)O sub(12) Thin Films Prepared by Sol-Gel Method

Bi sub(4-x)Ho sub(x)Ti sub(3)O sub(12) (BHT-x) thin films with Ho content x=0.2, 0.4, 0.6, 0.8, and 1.0 were prepared on Pt-Ti-SiO sub(2)-Si substrates by a sol-gel method. Effects of Ho contents on the microstructure and ferroelectric properties of BHT-x thin films were investigated. All the BHT-x...

Full description

Saved in:
Bibliographic Details
Published in:Journal of the American Ceramic Society 2008-10, Vol.91 (10), p.3280-3284
Main Authors: Guo, Dongyun, Zhang, Lianmeng, Li, Meiya, Liu, Jun, Yu, Benfang
Format: Article
Language:English
Subjects:
Density
Ferroelectric materials
Ferroelectricity
Leakage current
Microstructure
Polarization
Sol gel process
Thin films
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Bi sub(4-x)Ho sub(x)Ti sub(3)O sub(12) (BHT-x) thin films with Ho content x=0.2, 0.4, 0.6, 0.8, and 1.0 were prepared on Pt-Ti-SiO sub(2)-Si substrates by a sol-gel method. Effects of Ho contents on the microstructure and ferroelectric properties of BHT-x thin films were investigated. All the BHT-x samples consist of the Bi-layered Aurivillius phase. The lattice constants along the a, b, and c axes decrease with the increase of x. The remanent polarization (2P sub(r)) and dielectric constant (e sub(r)) increase firstly and then decreases with the increase of the Ho content, while the leakage current density shows opposite trend. BHT-0.4 film exhibits the best electrical properties with 2P sub(r) 44.2 kC-cm super(2), 2E sub(c) 323.7 kV-cm, e sub(r) 489 (at 1 MHz), dielectric loss 0.018 (at 1 MHz), leakage current density 8.0 10 super(-8) A-cm super(2) (under 200 kV-cm), as well as the strongest fatigue resistance (the polarization loss is only 3% after 4.46 10 super(9) switching cycles).
ISSN:0002-7820
1551-2916
DOI:10.1111/j.1551-2916.2008.02664.x