Effect of Ho Content on Microstructure and Ferroelectric Properties of Bi sub(4-x)Ho sub(x)Ti sub(3)O sub(12) Thin Films Prepared by Sol-Gel Method

Bi sub(4-x)Ho sub(x)Ti sub(3)O sub(12) (BHT-x) thin films with Ho content x=0.2, 0.4, 0.6, 0.8, and 1.0 were prepared on Pt-Ti-SiO sub(2)-Si substrates by a sol-gel method. Effects of Ho contents on the microstructure and ferroelectric properties of BHT-x thin films were investigated. All the BHT-x...

Full description

Saved in:
Bibliographic Details
Published in:Journal of the American Ceramic Society 2008-10, Vol.91 (10), p.3280-3284
Main Authors: Guo, Dongyun, Zhang, Lianmeng, Li, Meiya, Liu, Jun, Yu, Benfang
Format: Article
Language:English
Subjects:
Density
Ferroelectric materials
Ferroelectricity
Leakage current
Microstructure
Polarization
Sol gel process
Thin films
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
cited_by
cites
container_end_page 3284
container_issue 10
container_start_page 3280
container_title Journal of the American Ceramic Society
container_volume 91
creator Guo, Dongyun
Zhang, Lianmeng
Li, Meiya
Liu, Jun
Yu, Benfang
description Bi sub(4-x)Ho sub(x)Ti sub(3)O sub(12) (BHT-x) thin films with Ho content x=0.2, 0.4, 0.6, 0.8, and 1.0 were prepared on Pt-Ti-SiO sub(2)-Si substrates by a sol-gel method. Effects of Ho contents on the microstructure and ferroelectric properties of BHT-x thin films were investigated. All the BHT-x samples consist of the Bi-layered Aurivillius phase. The lattice constants along the a, b, and c axes decrease with the increase of x. The remanent polarization (2P sub(r)) and dielectric constant (e sub(r)) increase firstly and then decreases with the increase of the Ho content, while the leakage current density shows opposite trend. BHT-0.4 film exhibits the best electrical properties with 2P sub(r) 44.2 kC-cm super(2), 2E sub(c) 323.7 kV-cm, e sub(r) 489 (at 1 MHz), dielectric loss 0.018 (at 1 MHz), leakage current density 8.0 10 super(-8) A-cm super(2) (under 200 kV-cm), as well as the strongest fatigue resistance (the polarization loss is only 3% after 4.46 10 super(9) switching cycles).
doi_str_mv 10.1111/j.1551-2916.2008.02664.x
format article
fullrecord <record><control><sourceid>proquest</sourceid><recordid>TN_cdi_proquest_miscellaneous_1082202759</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>1082202759</sourcerecordid><originalsourceid>FETCH-proquest_miscellaneous_10822027593</originalsourceid><addsrcrecordid>eNqVTL1OwzAQthBIhMI73NgMDrabpMlK1dClAqnZqzS5qK5cO9iOFJ6DF8aliJ1bvvt-CQHOEh7u-ZTwLONUlDxPBGNFwkSep8l0Q6I_45ZEjDFBl4Vg9-TBuVOgvCzSiHyt-x5bD6aHjYGV0R51YBq2srXGeTu2frQIje6gQmsNqhC3soV3awa0XqK7lF8kuPEwT-kUh53LO8X1VVvEbz_IRQz1UWqopDq70MehsdjB4RN2RtFXVLBFfzTdI7nrG-Xw6RdnZF6t69WGDtZ8jOj8_ixdi0o1Gs3o9pwVQjCxzMrFP6Lf3g9gKw</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>1082202759</pqid></control><display><type>article</type><title>Effect of Ho Content on Microstructure and Ferroelectric Properties of Bi sub(4-x)Ho sub(x)Ti sub(3)O sub(12) Thin Films Prepared by Sol-Gel Method</title><source>Wiley</source><creator>Guo, Dongyun ; Zhang, Lianmeng ; Li, Meiya ; Liu, Jun ; Yu, Benfang</creator><creatorcontrib>Guo, Dongyun ; Zhang, Lianmeng ; Li, Meiya ; Liu, Jun ; Yu, Benfang</creatorcontrib><description>Bi sub(4-x)Ho sub(x)Ti sub(3)O sub(12) (BHT-x) thin films with Ho content x=0.2, 0.4, 0.6, 0.8, and 1.0 were prepared on Pt-Ti-SiO sub(2)-Si substrates by a sol-gel method. Effects of Ho contents on the microstructure and ferroelectric properties of BHT-x thin films were investigated. All the BHT-x samples consist of the Bi-layered Aurivillius phase. The lattice constants along the a, b, and c axes decrease with the increase of x. The remanent polarization (2P sub(r)) and dielectric constant (e sub(r)) increase firstly and then decreases with the increase of the Ho content, while the leakage current density shows opposite trend. BHT-0.4 film exhibits the best electrical properties with 2P sub(r) 44.2 kC-cm super(2), 2E sub(c) 323.7 kV-cm, e sub(r) 489 (at 1 MHz), dielectric loss 0.018 (at 1 MHz), leakage current density 8.0 10 super(-8) A-cm super(2) (under 200 kV-cm), as well as the strongest fatigue resistance (the polarization loss is only 3% after 4.46 10 super(9) switching cycles).</description><identifier>ISSN: 0002-7820</identifier><identifier>EISSN: 1551-2916</identifier><identifier>DOI: 10.1111/j.1551-2916.2008.02664.x</identifier><language>eng</language><subject>Density ; Ferroelectric materials ; Ferroelectricity ; Leakage current ; Microstructure ; Polarization ; Sol gel process ; Thin films</subject><ispartof>Journal of the American Ceramic Society, 2008-10, Vol.91 (10), p.3280-3284</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27924,27925</link.rule.ids></links><search><creatorcontrib>Guo, Dongyun</creatorcontrib><creatorcontrib>Zhang, Lianmeng</creatorcontrib><creatorcontrib>Li, Meiya</creatorcontrib><creatorcontrib>Liu, Jun</creatorcontrib><creatorcontrib>Yu, Benfang</creatorcontrib><title>Effect of Ho Content on Microstructure and Ferroelectric Properties of Bi sub(4-x)Ho sub(x)Ti sub(3)O sub(12) Thin Films Prepared by Sol-Gel Method</title><title>Journal of the American Ceramic Society</title><description>Bi sub(4-x)Ho sub(x)Ti sub(3)O sub(12) (BHT-x) thin films with Ho content x=0.2, 0.4, 0.6, 0.8, and 1.0 were prepared on Pt-Ti-SiO sub(2)-Si substrates by a sol-gel method. Effects of Ho contents on the microstructure and ferroelectric properties of BHT-x thin films were investigated. All the BHT-x samples consist of the Bi-layered Aurivillius phase. The lattice constants along the a, b, and c axes decrease with the increase of x. The remanent polarization (2P sub(r)) and dielectric constant (e sub(r)) increase firstly and then decreases with the increase of the Ho content, while the leakage current density shows opposite trend. BHT-0.4 film exhibits the best electrical properties with 2P sub(r) 44.2 kC-cm super(2), 2E sub(c) 323.7 kV-cm, e sub(r) 489 (at 1 MHz), dielectric loss 0.018 (at 1 MHz), leakage current density 8.0 10 super(-8) A-cm super(2) (under 200 kV-cm), as well as the strongest fatigue resistance (the polarization loss is only 3% after 4.46 10 super(9) switching cycles).</description><subject>Density</subject><subject>Ferroelectric materials</subject><subject>Ferroelectricity</subject><subject>Leakage current</subject><subject>Microstructure</subject><subject>Polarization</subject><subject>Sol gel process</subject><subject>Thin films</subject><issn>0002-7820</issn><issn>1551-2916</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2008</creationdate><recordtype>article</recordtype><recordid>eNqVTL1OwzAQthBIhMI73NgMDrabpMlK1dClAqnZqzS5qK5cO9iOFJ6DF8aliJ1bvvt-CQHOEh7u-ZTwLONUlDxPBGNFwkSep8l0Q6I_45ZEjDFBl4Vg9-TBuVOgvCzSiHyt-x5bD6aHjYGV0R51YBq2srXGeTu2frQIje6gQmsNqhC3soV3awa0XqK7lF8kuPEwT-kUh53LO8X1VVvEbz_IRQz1UWqopDq70MehsdjB4RN2RtFXVLBFfzTdI7nrG-Xw6RdnZF6t69WGDtZ8jOj8_ixdi0o1Gs3o9pwVQjCxzMrFP6Lf3g9gKw</recordid><startdate>20081001</startdate><enddate>20081001</enddate><creator>Guo, Dongyun</creator><creator>Zhang, Lianmeng</creator><creator>Li, Meiya</creator><creator>Liu, Jun</creator><creator>Yu, Benfang</creator><scope>7QQ</scope><scope>7SR</scope><scope>8FD</scope><scope>JG9</scope></search><sort><creationdate>20081001</creationdate><title>Effect of Ho Content on Microstructure and Ferroelectric Properties of Bi sub(4-x)Ho sub(x)Ti sub(3)O sub(12) Thin Films Prepared by Sol-Gel Method</title><author>Guo, Dongyun ; Zhang, Lianmeng ; Li, Meiya ; Liu, Jun ; Yu, Benfang</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-proquest_miscellaneous_10822027593</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2008</creationdate><topic>Density</topic><topic>Ferroelectric materials</topic><topic>Ferroelectricity</topic><topic>Leakage current</topic><topic>Microstructure</topic><topic>Polarization</topic><topic>Sol gel process</topic><topic>Thin films</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Guo, Dongyun</creatorcontrib><creatorcontrib>Zhang, Lianmeng</creatorcontrib><creatorcontrib>Li, Meiya</creatorcontrib><creatorcontrib>Liu, Jun</creatorcontrib><creatorcontrib>Yu, Benfang</creatorcontrib><collection>Ceramic Abstracts</collection><collection>Engineered Materials Abstracts</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><jtitle>Journal of the American Ceramic Society</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Guo, Dongyun</au><au>Zhang, Lianmeng</au><au>Li, Meiya</au><au>Liu, Jun</au><au>Yu, Benfang</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Effect of Ho Content on Microstructure and Ferroelectric Properties of Bi sub(4-x)Ho sub(x)Ti sub(3)O sub(12) Thin Films Prepared by Sol-Gel Method</atitle><jtitle>Journal of the American Ceramic Society</jtitle><date>2008-10-01</date><risdate>2008</risdate><volume>91</volume><issue>10</issue><spage>3280</spage><epage>3284</epage><pages>3280-3284</pages><issn>0002-7820</issn><eissn>1551-2916</eissn><abstract>Bi sub(4-x)Ho sub(x)Ti sub(3)O sub(12) (BHT-x) thin films with Ho content x=0.2, 0.4, 0.6, 0.8, and 1.0 were prepared on Pt-Ti-SiO sub(2)-Si substrates by a sol-gel method. Effects of Ho contents on the microstructure and ferroelectric properties of BHT-x thin films were investigated. All the BHT-x samples consist of the Bi-layered Aurivillius phase. The lattice constants along the a, b, and c axes decrease with the increase of x. The remanent polarization (2P sub(r)) and dielectric constant (e sub(r)) increase firstly and then decreases with the increase of the Ho content, while the leakage current density shows opposite trend. BHT-0.4 film exhibits the best electrical properties with 2P sub(r) 44.2 kC-cm super(2), 2E sub(c) 323.7 kV-cm, e sub(r) 489 (at 1 MHz), dielectric loss 0.018 (at 1 MHz), leakage current density 8.0 10 super(-8) A-cm super(2) (under 200 kV-cm), as well as the strongest fatigue resistance (the polarization loss is only 3% after 4.46 10 super(9) switching cycles).</abstract><doi>10.1111/j.1551-2916.2008.02664.x</doi></addata></record>
fulltext fulltext
identifier ISSN: 0002-7820
ispartof Journal of the American Ceramic Society, 2008-10, Vol.91 (10), p.3280-3284
issn 0002-7820
1551-2916
language eng
recordid cdi_proquest_miscellaneous_1082202759
source Wiley
subjects Density
Ferroelectric materials
Ferroelectricity
Leakage current
Microstructure
Polarization
Sol gel process
Thin films
title Effect of Ho Content on Microstructure and Ferroelectric Properties of Bi sub(4-x)Ho sub(x)Ti sub(3)O sub(12) Thin Films Prepared by Sol-Gel Method
url http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-27T18%3A56%3A48IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Effect%20of%20Ho%20Content%20on%20Microstructure%20and%20Ferroelectric%20Properties%20of%20Bi%20sub(4-x)Ho%20sub(x)Ti%20sub(3)O%20sub(12)%20Thin%20Films%20Prepared%20by%20Sol-Gel%20Method&rft.jtitle=Journal%20of%20the%20American%20Ceramic%20Society&rft.au=Guo,%20Dongyun&rft.date=2008-10-01&rft.volume=91&rft.issue=10&rft.spage=3280&rft.epage=3284&rft.pages=3280-3284&rft.issn=0002-7820&rft.eissn=1551-2916&rft_id=info:doi/10.1111/j.1551-2916.2008.02664.x&rft_dat=%3Cproquest%3E1082202759%3C/proquest%3E%3Cgrp_id%3Ecdi_FETCH-proquest_miscellaneous_10822027593%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_pqid=1082202759&rft_id=info:pmid/&rfr_iscdi=true