AlInN MOVPE: growth chemistry and analysis of trends

Comprehensive model of AlInN Metal-Organic Vapor Phase Epitaxy (MOVPE) accounting for the gas-phase and surface chemistry including parasitic reactions/particle formation is developed. Experimental data and modeling results suggest that as V/III ratio increases from several tens (growth of pure AlN)...

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Bibliographic Details
Published in:Journal of crystal growth 2012-08, Vol.352 (1), p.199-202
Main Authors: Lobanova, A.V., Segal, A.S., Yakovlev, E.V., Talalaev, R.A.
Format: Article
Language:English
Subjects:
A1. Computer simulation
A3. Metalorganic vapor phase epitaxy
Accounting
Aluminum nitride
B1. AlInN
B1. AlN
B1. Nitrides
Concentration (composition)
Crystal growth
Diffusivity
Mathematical models
Surface chemistry
Vapor phase epitaxy
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Summary:Comprehensive model of AlInN Metal-Organic Vapor Phase Epitaxy (MOVPE) accounting for the gas-phase and surface chemistry including parasitic reactions/particle formation is developed. Experimental data and modeling results suggest that as V/III ratio increases from several tens (growth of pure AlN) to several thousands (growth of AlInN), the partial AlN growth rate decreases even in the absence of strong particle formation. This effect is associated with the formation of heavy molecular weight/low diffusivity gas-phase dimer species at high ammonia concentration. At elevated pressures growth rate decreases with pressure at a weakly changing composition, which is related to the gas-phase losses of In- and Al-containing species due to reaction with AlN particles. Model allows the prediction of both the AlInN growth rate and composition versus group-III flow rates, temperature, and pressure. ► Model of AlInN MOVPE is developed. ► Growth rate and composition versus group-III flow and temperature are predicted. ► Essential role of the Al-related gas-phase parasitic chemistry is revealed. ► At high pressure, losses of In- and Al-containing species are possible.
ISSN:0022-0248
1873-5002
DOI:10.1016/j.jcrysgro.2011.11.015