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Roles of phosphorous in Sn4Ag0.5Cu solder reaction with electrolytic Ni–Au
The reaction of P-doped Sn4Ag0.5Cu solder with electrolytic Ni–Au forms a layer of nano crystallites in between (Cu,Ni)6Sn5 and (Ni,Cu)3Sn4. This layer effectively suppresses the growth of intermetallic compound. [Display omitted] ► P-doped solder changed the intermetallic compounds from chunky to p...
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Published in: | Journal of alloys and compounds 2012-10, Vol.539, p.57-62 |
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Main Authors: | , , , , |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
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Summary: | The reaction of P-doped Sn4Ag0.5Cu solder with electrolytic Ni–Au forms a layer of nano crystallites in between (Cu,Ni)6Sn5 and (Ni,Cu)3Sn4. This layer effectively suppresses the growth of intermetallic compound. [Display omitted]
► P-doped solder changed the intermetallic compounds from chunky to planar structure. ► P-doped solder suppressed the growth of intermetallic and tensile strain. ► Nano crystallites were found in between (Ni,Cu)6Sn5 and (Cu,Ni)3Sn4. ► P-doped solder strengthened the interface initially but not multiple reflows. ► P-doped solder increased the activation energy of intermetallic compounds.
In this study, the interfacial reactions of different P-doped and undoped Sn4Ag0.5Cu solders with electrolytic Ni–Au were investigated. The solder joints were reflowed once and then subjected to two more reflow cycles. The thickness of the intermetallic compound (IMC) layer and the IMC composition were analyzed by scanning electron microscopy and transmission electron microscopy (TEM). The tensile properties of the solder joint were measured using a Dage 4000 instrument. The results showed that the P content of the solder was inversely proportional to the IMC layer thickness and maximum tensile strain. TEM observations showed that a nanocrystallite layer existed between (Ni,Cu)6Sn5 and (Cu,Ni)3Sn4. This nanocrystallite layer was responsible for the abovementioned relationship. This layer not only suppressed the growth of the IMC layer effectively but also decreased the pull strength of the solder joint after three reflow cycles. Energy-dispersive X-ray spectra of this interfacial layer were recorded to determine the P, Ni, Cu, and Sn contents. As the P content of the P-doped Sn4Ag0.5Cu solder was increased, the IMC layer, which originally had a chunky morphology, became thin and flat. In this paper, the role of P in the Sn4Ag0.5Cu solder reactions and the potential applications of P-doped solders are discussed. |
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ISSN: | 0925-8388 1873-4669 |
DOI: | 10.1016/j.jallcom.2012.06.020 |