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Luminescence and defect studies of YAlO3: Dy3+, Sm3+ single crystals exposed to 100ANBMeV Si7+ ion beam
Ionoluminescence (IL) and photoluminescence (PL) spectra for different rare earth ions (Sm3+ and Dy3+) activated YAlO3 single crystals have been induced with 100 MeV Si7+ ions with fluence of 7.81X1012 ions cma2. Prominent IL and PL emission peaks in the range 550-725 nm in Sm3+ and 482-574 nm in Dy...
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Published in: | Journal of luminescence 2012-10, Vol.132 (10), p.2679-2683 |
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Main Authors: | , , , , , , , , |
Format: | Article |
Language: | English |
Subjects: | |
Online Access: | Get full text |
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Summary: | Ionoluminescence (IL) and photoluminescence (PL) spectra for different rare earth ions (Sm3+ and Dy3+) activated YAlO3 single crystals have been induced with 100 MeV Si7+ ions with fluence of 7.81X1012 ions cma2. Prominent IL and PL emission peaks in the range 550-725 nm in Sm3+ and 482-574 nm in Dy3+ were recorded. Variation of IL intensity in Dy3+ doped YAlO3 single crystals was studied in the fluence range 7.81X1012-11.71X1012 ions cma2. IL intensity is found to be high in lower ion fluences and it decreases with increase in ion fluence due to thermal quenching as a result of an increase in the sample temperature caused by ion beam irradiation. Thermoluminescence (TL) spectra were recorded for fluence of 5.2X1012 ions cma2 on pure and doped crystals at a warming rate of 5 degree C sa1 at room temperature. Pure crystals show two glow peaks at 232 (Tg1) and 328 degree C (Tg2). However, in Sm3+ doped crystals three glow peaks at 278 (Tg1), 332 (Tg2) and 384 degree C (Tg3) and two glow peaks at 278 (Tg1) and 331 degree C (Tg2) in Dy3+ was recorded. The kinetic parameters (E, b s) were estimated using glow peak shape method. The decay of IL intensity was explained by excitation spike model. |
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ISSN: | 0022-2313 |
DOI: | 10.1016/j.jlumin.2012.04.030 |