High-quality spin-on glass-based oxide as a matrix for embedding HfO2 nanoparticles for metal-oxide-semiconductor capacitors

By using a low cost, simple, and reproducible spin-coating method, thin films of SOG (spin-on-glass)-based oxides with electrical characteristics resembling those of a dry thermal oxide have been obtained. The superior electrical characteristics of Metal-Oxide-Semiconductor (MOS) capacitors based on...

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Bibliographic Details
Published in:Journal of materials science 2012-03, Vol.47 (5), p.2248-2255
Main Authors: Molina, Joel, Munoz, Ana Luz, Calleja, Wilfrido, Rosales, Pedro, Torres, Alfonso
Format: Article
Language:English
Subjects:
Annealing
Capacitors
Characterization and Evaluation of Materials
Chemistry and Materials Science
Classical Mechanics
Crystallography and Scattering Methods
Deionization
Dilution
Embedding
Fourier transforms
Glass
Hafnium oxide
Infrared analysis
Infrared spectroscopy
Materials Science
Metal oxide semiconductors
Nanoparticles
Organic chemistry
Oxides
Polymer Sciences
Solid Mechanics
Spin coating
Thin films
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Summary:By using a low cost, simple, and reproducible spin-coating method, thin films of SOG (spin-on-glass)-based oxides with electrical characteristics resembling those of a dry thermal oxide have been obtained. The superior electrical characteristics of Metal-Oxide-Semiconductor (MOS) capacitors based on SOG-oxides come from both (1) reducing the organic content of the SOG solutions after dilution with deionized water and (2) passivation of the silicon surface by a thin chemical oxide. Fourier transform infrared spectroscopy analysis shows that the organic content in H 2 O-diluted SOG-oxides is reduced compared to undiluted SOG after N 2 annealing. In addition, by chemically embedding HfO 2 nanoparticles (np-HfO 2 ) to these SOG-based oxides, an effective increase in the accumulation capacitance of MOS capacitors is observed and this is related to the increase in the final dielectric constant of the resulting oxide after annealing so that potential use of SOG as a glass matrix for embedding HfO 2 nanoparticles and produce higher-k oxide materials is demonstrated.
ISSN:0022-2461
1573-4803
DOI:10.1007/s10853-011-6036-0