Pressure dependence of energy gap of III–V and II–VI ternary semiconductors

A general expression for the pressure dependence of the energy gap of a series of group III–V and group II–VI ternary semiconductors have been derived based on Van Vechten’s dielectric theory. The results obtained are in good accord with the available experimental data. The trends in the variation o...

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Bibliographic Details
Published in:Journal of materials science 2012-08, Vol.47 (15), p.5735-5742
Main Authors: Chen, Dongguo, Ravindra, N. M.
Format: Article
Language:English
Subjects:
Characterization and Evaluation of Materials
Chemistry and Materials Science
Classical Mechanics
Crystallography and Scattering Methods
Dielectrics
Energy gap
Group III-V semiconductors
Materials Science
Polymer Sciences
Pressure dependence
Semiconductors
Solid Mechanics
Temperature
Trends
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Summary:A general expression for the pressure dependence of the energy gap of a series of group III–V and group II–VI ternary semiconductors have been derived based on Van Vechten’s dielectric theory. The results obtained are in good accord with the available experimental data. The trends in the variation of the pressure dependence of the energy gap with the nearest neighbor distance and Phillips ionicity are explored qualitatively.
ISSN:0022-2461
1573-4803
DOI:10.1007/s10853-012-6464-5