Effect of lattice misfit on the transition temperature of VO2 thin film

Vanadium dioxide thin films were deposited on c-cut sapphire and MgO(111) substrate using pulsed laser deposition method to investigate the effect of lattice misfit between the thin film and the substrate on the transition temperature of VO 2 thin film. All vanadium dioxide thin films showed heteroe...

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Bibliographic Details
Published in:Journal of materials science 2012-09, Vol.47 (17), p.6397-6401
Main Authors: Koo, Hyun, Yoon, Sejin, Kwon, O-Jong, Ko, Kyeong-Eun, Shin, Dongmin, Bae, Sung-Hwan, Chang, Se-Hong, Park, Chan
Format: Article
Language:English
Subjects:
Characterization and Evaluation of Materials
Chemistry and Materials Science
Classical Mechanics
Crystallography and Scattering Methods
Deposition
Lattices
Magnesium oxide
Materials Science
Orientation
Polymer Sciences
Preferred orientation
Pulsed laser deposition
Pulsed lasers
Sapphire
Solid Mechanics
Substrates
Temperature
Thin films
Transition temperature
Vanadium dioxide
Vanadium oxides
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Summary:Vanadium dioxide thin films were deposited on c-cut sapphire and MgO(111) substrate using pulsed laser deposition method to investigate the effect of lattice misfit between the thin film and the substrate on the transition temperature of VO 2 thin film. All vanadium dioxide thin films showed heteroepitaxial growth with (002) preferred orientation. VO 2 /c-sapphire and VO 2 /MgO(111) had different transition temperatures, regardless of the thickness, orientation, and deposition conditions of the thin film. These results suggest that considering lattice mismatch between thin film and substrate is another promising option for controlling transition temperature of VO 2 thin films.
ISSN:0022-2461
1573-4803
DOI:10.1007/s10853-012-6565-1