One-dimensional to three-dimensional ripple-to-dome transition for SiGe on vicinal Si (1 1 10)

SiGe heteroepitaxy on vicinal Si (1 1 10) is studied as a model system for one-dimensional (1D) to three-dimensional growth mode transitions. By in situ scanning tunneling microscopy it is shown that the 1D-3D transition proceeds smoothly from perfectly facetted 1D nanoripples to coarsened superripp...

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Bibliographic Details
Published in:Physical review letters 2012-07, Vol.109 (2), p.025505-025505, Article 025505
Main Authors: Sanduijav, B, Scopece, D, Matei, D, Chen, G, Schäffler, F, Miglio, L, Springholz, G
Format: Article
Language:English
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Summary:SiGe heteroepitaxy on vicinal Si (1 1 10) is studied as a model system for one-dimensional (1D) to three-dimensional growth mode transitions. By in situ scanning tunneling microscopy it is shown that the 1D-3D transition proceeds smoothly from perfectly facetted 1D nanoripples to coarsened superripples, tadpoles, asymmetric domes, and barns without involving coalescence or agglomeration. By extension of the studies to a wide range of SiGe compositions, a 1D-3D growth phase diagram is obtained. Total energy calculations reveal that the observed critical transition volumes are fully consistent with thermodynamic driven strain relaxation.
ISSN:0031-9007
1079-7114
DOI:10.1103/PhysRevLett.109.025505