ZnCdSe/ZnCdMgSe quantum well infrared photodetector

We report the design, fabrication and characterization of a II-VI Zn(0.51)Cd(0.49)Se / Zn0.45(Cd)0.42(Mg)(0.13)Se-based quantum well infrared photodetector (QWIP) with a bound to quasi-bound transition centered at 8.7 µm. The good growth quality of the epitaxial layers was verified by x-ray diffract...

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Bibliographic Details
Published in:Optics express 2012-09, Vol.20 (20), p.22391-22397
Main Authors: Ravikumar, Arvind P, Alfaro-Martinez, Adrian, Chen, Guopeng, Zhao, Kuaile, Tamargo, Maria C, Gmachl, Claire F, Shen, Aidong
Format: Article
Language:English
Subjects:
Cadmium Compounds - chemistry
Cadmium Compounds - radiation effects
Conductometry - instrumentation
Equipment Design
Equipment Failure Analysis
Light
Photometry - instrumentation
Photons
Selenium Compounds - chemistry
Selenium Compounds - radiation effects
Zinc Compounds - chemistry
Zinc Compounds - radiation effects
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Summary:We report the design, fabrication and characterization of a II-VI Zn(0.51)Cd(0.49)Se / Zn0.45(Cd)0.42(Mg)(0.13)Se-based quantum well infrared photodetector (QWIP) with a bound to quasi-bound transition centered at 8.7 µm. The good growth quality of the epitaxial layers was verified by x-ray diffraction measurements. Absorption and photocurrent measurements yield results consistent with conventional III-V QWIPs. Photocurrent measurements reveal an exponential decrease with temperature. In addition, we also observe more than 4 orders of magnitude increase in photocurrent with applied bias. By compensating the drop in temperature performance with an increase in applied bias, we achieve an operating temperature of up to 140K and a responsivity of 1-10 µA/W.
ISSN:1094-4087
1094-4087
DOI:10.1364/OE.20.022391