The effects of proton irradiation on the electrical properties of NbAlO/AlGaN/GaN MIS-HEMT

AlGaN/GaN metal-insulator-semiconductor high electron-mobility transistors (MIS-HEMTs) with atomic layer deposited (ALD) NbAlO gate dielectric were investigated using 3 MeV proton irradiation at a fluence of 10 15 p/cm 2 . It was found that the proton irradiation damage caused degradation in DC perf...

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Bibliographic Details
Published in:Science China. Physics, mechanics & astronomy mechanics & astronomy, 2012, Vol.55 (1), p.40-43
Main Authors: Bi, ZhiWei, Feng, Qian, Zhang, JinCheng, Lü, Ling, Mao, Wei, Gu, WenPing, Ma, XiaoHua, Hao, Yue
Format: Article
Language:English
Subjects:
Aluminum gallium nitrides
Astronomy
Classical and Continuum Physics
Density
Dielectrics
Electric potential
Electrical properties
Fluence
Gallium nitrides
High electron mobility transistors
Insulators
Irradiation
MIS (semiconductors)
Observations and Techniques
Physics
Physics and Astronomy
Proton damage
Proton irradiation
Radiation damage
Semiconductor devices
Voltage
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Summary:AlGaN/GaN metal-insulator-semiconductor high electron-mobility transistors (MIS-HEMTs) with atomic layer deposited (ALD) NbAlO gate dielectric were investigated using 3 MeV proton irradiation at a fluence of 10 15 p/cm 2 . It was found that the proton irradiation damage caused degradation in DC performance and a flatband voltage shift in the capacitance-voltage curve. Gate-drain conductance measurements indicated that new traps were introduced in GaN from the irradiation, and the trap densities increased from 1.18×10 12 cm −2 ·eV −1 to 1.82×10 12 cm −2 ·eV-1 in MIS-HEMTs after irradiation. However, these increases in trap densities caused by irradiation in MIS-HEMT are less than those in HEMT, which can be attributed to the protection of the AlGaN surface by the NbAlO dielectric layer.
ISSN:1674-7348
1869-1927
DOI:10.1007/s11433-011-4572-x