Preparation of Ga2Se3 thin films by sol–gel technique

• Published in: Journal of sol-gel science and technology 2009-06, Vol.50 (3), p.271-274
• Main Authors: Mutlu, Ibrahim H., Zarbaliyev, Maharram Z., Aslan, Ferhat
• Format: Article
• Language: English
• Subjects: Absorption spectra; Band spectra; Beta phase; Ceramics; Chemistry; Chemistry and Materials Science; Colloidal gels. Colloidal sols; Colloidal state and disperse state; Composites; Crystal structure; Crystals; Diffraction; Electron microscopes; Exact sciences and technology; Gallium triselenide; General and physical chemistry; Glass; Grain size; Inorganic Chemistry; Materials Science; Nanotechnology; Natural Materials; Optical and Electronic Materials; Original Paper; Scanning electron microscopy; Semiconductors; Sol-gel processes; Thin films; X-ray diffraction
• ISSN: 0928-0707; 1573-4846
• DOI: 10.1007/s10971-009-1973-7

In this study we describe the preparation of Ga 2 Se 3 semiconductor compound thin films by sol–gel method for different crystal formation temperatures. The films were characterized by X-ray diffraction analyses (XRD), UV–visible spectrometer, and scanning electron microscope (SEM). The XRD spectrum showed that the formation of Ga 2 Se 3 crystals were between 743 and 823 K. The thin film crystals that were formed at 773 K corresponded to the β phase and the preferred crystal structure was monoclinic. The value of band gap from optical absorption spectra for the Ga 2 Se 3 thin films was estimated to be about E g  ~ 2.56 eV. The thickness of the one-coat Ga 2 Se 3 thin films, which was measured by a Spectroscopic Ellipsometer, was about ~200 nm. The average grain sizes of scattered particles were within the limits between 200 and 500 nm.