The fixed oxide trap modelling during isothermal and isochronal annealing of irradiated RADFETs

• Published in: Journal of physics. D, Applied physics Applied physics, 2012-08, Vol.45 (30), p.305101-1-11
• Main Authors: Risti, Goran S, Vasovi, Nikola D, Jakši, Aleksandar B
• Format: Article
• Language: English
• Subjects: Annealing; Charging; Defect annealing; Density; Isothermal annealing; Mathematical models; Modelling
• ISSN: 0022-3727; 1361-6463
• DOI: 10.1088/0022-3727/45/30/305101

The density of fixed traps (FTs), ΔNft (cm−2), during isothermal annealing of irradiated radiation-sensitive field-effect transistors (RADFETs) from room temperature to 200 °C has been modelled. The modelling has shown that a simple, two-defect model (2DM), containing two defect types: one defect type for positively charged FTs (PCFTs), and another for negatively charged FTs (NCFTs), is applicable for the temperatures up to 100 °C. However, the three-defect model (3DM), which includes additional PCFT type, should be used for temperatures from 100 to 200 °C. The models describing the behaviour of NCFTs during isothermal annealing have also been analysed. The activation energies of , and , for two PCFT types and one NCFT type, respectively, have been found. In addition, isochronal unannealed curves have been well fitted using logistic function. The modelling of isochronal annealing has also shown that one PCFT type up to 100 °C, and two PCFT types for 100-200 °C, respectively, are active, and additional defect(s) should be included for the temperatures higher than 200 °C. The isochronal annealing, which is significantly less time consuming than isothermal annealing, could be very good tool for the revealing of defects created by various stress types.