Three-Gigahertz Graphene Frequency Doubler on Quartz Operating Beyond the Transit Frequency

• Published in: IEEE transactions on nanotechnology 2012-09, Vol.11 (5), p.877-883
• Main Authors: Ramón, M. E., Parrish, K. N., Chowdhury, S. F., Magnuson, C. W., Movva, H. C. P., Ruoff, R. S., Banerjee, S. K., Akinwande, D.
• Format: Article
• Language: English
• Subjects: Applied sciences; Bandwidth; Capacitance; Circuit properties; Conversion; Design. Technologies. Operation analysis. Testing; Devices; Digital circuits; doubler; Electric, optical and optoelectronic circuits; Electronic circuits; Electronics; Exact sciences and technology; Frequency conversion; Frequency doublers; Gain; General equipment and techniques; Graphene; Instruments, apparatus, components and techniques common to several branches of physics and astronomy; Integrated circuits; Performance evaluation; Physics; Quantum capacitance; Quartz; radio frequency devices; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Sensors (chemical, optical, electrical, movement, gas, etc.); remote sensing; Transistors; Transit; transit frequency
• ISSN: 1536-125X; 1941-0085
• DOI: 10.1109/TNANO.2012.2203826

We demonstrate a 500-nm graphene frequency doubler with a record 3-GHz bandwidth, exceeding the device transit frequency by 50%, a previously unobserved result in graphene, indicating that graphene multiplier devices might be useful beyond their transit frequency. The maximum conversion gain of graphene ambipolar frequency doublers is determined to approach a near lossless value in the quantum capacitance limit. In addition, the experimental performance of graphene transistor frequency detectors is demonstrated, showing responsivity of 25.2 μA/μW. The high-frequency performance of these gigahertz devices is enabled by top-gate device fabrication using synthesized graphene transferred onto low capacitance, atomically smooth quartz substrates, affording carrier mobilities as high as 5000 cm 2 /V ·s.