Light absorption engineering of hydrogenated nanocrystalline silicon by femtosecond laser

The light absorption coefficient of hydrogenated nanocrystalline silicon has been engineered to have a Gaussian distribution by means of absorption modification using a femtosecond laser. The absorption-modified sample exhibits a significant absorption enhancement of up to ∼700%, and the strong abso...

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Published in:Optics letters 2012-09, Vol.37 (17), p.3639-3641
Main Authors: Zheng, D Q, Ma, Y J, Xu, L, Su, W A, Ye, Q H, Oh, J I, Shen, W Z
Format: Article
Language:English
Subjects:
Construction
Femtosecond
Incident light
Lasers
Light absorption
Nanocrystals
Optical limiters
Silicon
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description The light absorption coefficient of hydrogenated nanocrystalline silicon has been engineered to have a Gaussian distribution by means of absorption modification using a femtosecond laser. The absorption-modified sample exhibits a significant absorption enhancement of up to ∼700%, and the strong absorption does not depend on the incident light. We propose a model responsible for this interesting behavior. In addition, we present an optical limiter constructed through this absorption engineering method.
doi_str_mv 10.1364/OL.37.003639
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source Optica Publishing Group Journals
subjects Construction
Femtosecond
Incident light
Lasers
Light absorption
Nanocrystals
Optical limiters
Silicon
title Light absorption engineering of hydrogenated nanocrystalline silicon by femtosecond laser
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