Influence of Ar/H2 ratio on the characteristics of phosphorus-doped hydrogenated nanocrystalline silicon films prepared by electron cyclotron resonance plasma-enhanced chemical vapor deposition

Phosphorus-doped hydrogenated nanocrystalline silicon films (nc-Si(P):H) were prepared by electron cyclotron resonance plasma-enhanced chemical vapor deposition. The effect of Ar/H2 ratio on the characteristics of as-grown nc-Si(P):H films was investigated systematically with Raman scattering, Hall...

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Bibliographic Details
Published in:Thin solid films 2012-10, Vol.521, p.181-184
Main Authors: Zhang, Xueyu, Wu, Aimin, Shi, Shaofei, Qin, Fuwen, Bian, Jiming
Format: Article
Language:English
Subjects:
Ar/H2
Chemical vapor deposition
Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.)
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Cross-disciplinary physics: materials science
rheology
Doping
ECR-PECVD
Electron cyclotron resonance
Electron density
Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures
Electronic transport phenomena in thin films and low-dimensional structures
Exact sciences and technology
Fourier transforms
Infrared
Infrared spectroscopy
Materials science
Methods of deposition of films and coatings
film growth and epitaxy
Nanocrystals
Nanoscale materials and structures: fabrication and characterization
nc-Si:H
Other topics in nanoscale materials and structures
Physics
Silicon films
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Summary:Phosphorus-doped hydrogenated nanocrystalline silicon films (nc-Si(P):H) were prepared by electron cyclotron resonance plasma-enhanced chemical vapor deposition. The effect of Ar/H2 ratio on the characteristics of as-grown nc-Si(P):H films was investigated systematically with Raman scattering, Hall effect measurements as well as Fourier Transform infrared spectroscopy (FTIR). The results indicated that the Ar/H2 ratio played a critical role for the crystalline quality and electrical properties of the nc-Si:H films. FTIR also showed that infrared spectrum intensity of SiH2 bonding mode peak decreased when Ar/H2 ratio increased. The optimal value Ar/H2 ratio of 10/15 was obtained for high quality nc-Si(P):H films with high electron density and the mechanism was elucidated in terms of Raman and FTIR analysis.
ISSN:0040-6090
1879-2731
DOI:10.1016/j.tsf.2011.12.038