Electron beam induced deposition of silicon nanostructures from a liquid phase precursor

This work demonstrates electron beam induced deposition of silicon from a SiCl4 liquid precursor in a transmission electron microscope and a scanning electron microscope. Silicon nanodots of tunable size are reproducibly grown in controlled geometries. The volume of these features increases linearly...

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Bibliographic Details
Published in:Nanotechnology 2012-09, Vol.23 (38), p.385302-1-6
Main Authors: Liu, Yin, Chen, Xin, Noh, Kyong Wook, Dillon, Shen J
Format: Article
Language:English
Subjects:
Crystallization - methods
Deposition
Electron beams
Electrons
Electroplating - methods
Macromolecular Substances - chemistry
Macromolecular Substances - radiation effects
Materials Testing
Molecular Conformation - radiation effects
Nanocomposites
Nanomaterials
Nanostructure
Nanostructures - chemistry
Nanostructures - radiation effects
Nanostructures - ultrastructure
Particle Size
Phase Transition
Scanning electron microscopy
Silicon
Silicon - chemistry
Silicon - radiation effects
Silicon substrates
Solutions
Surface Properties - radiation effects
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Summary:This work demonstrates electron beam induced deposition of silicon from a SiCl4 liquid precursor in a transmission electron microscope and a scanning electron microscope. Silicon nanodots of tunable size are reproducibly grown in controlled geometries. The volume of these features increases linearly with deposition time. The results indicate that secondary electrons generated at the substrate surface serve as the primary source of silicon reduction. However, at high current densities the influence of the primary electrons is observed to retard growth. The results demonstrate a new approach to fabricating silicon nanostructures and provide fundamental insights into the mechanism for liquid phase electron beam induced deposition.
ISSN:0957-4484
1361-6528
DOI:10.1088/0957-4484/23/38/385302