Mapping of minority carrier lifetime distributions in multicrystalline silicon using transient electron-beam-induced current

We have used transient electron-beam-induced current (EBIC) to map minority carrier lifetime distributions in multicrystalline Silicon (mc-Si). In this technique, the electron beam from a scanning transmission electron microscope was on-off modulated while the sample was scanned. The resulting trans...

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Bibliographic Details
Published in:Journal of electron microscopy 2012-10, Vol.61 (5), p.293-298
Main Authors: Kushida, Takuya, Tanaka, Shigeyasu, Morita, Chiaki, Tanji, Takayoshi, Ohshita, Yoshio
Format: Article
Language:English
Subjects:
Computer simulation
Electron beams
Electrons
Mapping
Mathematical analysis
Mathematical models
Microscopy, Electron, Scanning - methods
Minority carriers
Models, Theoretical
Numerical analysis
Scanning electron microscopy
Silicon
Silicon Compounds - chemistry
Silicon wafers
Transients and Migrants
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Summary:We have used transient electron-beam-induced current (EBIC) to map minority carrier lifetime distributions in multicrystalline Silicon (mc-Si). In this technique, the electron beam from a scanning transmission electron microscope was on-off modulated while the sample was scanned. The resulting transient EBIC was analyzed to form a lifetime map. An analytical function was introduced as part of the analysis in determining this map. We have verified this approach using numerical simulations and have reproduced a lifetime map for an mc-Si wafer.
ISSN:0022-0744
1477-9986
2050-5701
DOI:10.1093/jmicro/dfs050