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Mapping of minority carrier lifetime distributions in multicrystalline silicon using transient electron-beam-induced current
We have used transient electron-beam-induced current (EBIC) to map minority carrier lifetime distributions in multicrystalline Silicon (mc-Si). In this technique, the electron beam from a scanning transmission electron microscope was on-off modulated while the sample was scanned. The resulting trans...
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Published in: | Journal of electron microscopy 2012-10, Vol.61 (5), p.293-298 |
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container_title | Journal of electron microscopy |
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creator | Kushida, Takuya Tanaka, Shigeyasu Morita, Chiaki Tanji, Takayoshi Ohshita, Yoshio |
description | We have used transient electron-beam-induced current (EBIC) to map minority carrier lifetime distributions in multicrystalline Silicon (mc-Si). In this technique, the electron beam from a scanning transmission electron microscope was on-off modulated while the sample was scanned. The resulting transient EBIC was analyzed to form a lifetime map. An analytical function was introduced as part of the analysis in determining this map. We have verified this approach using numerical simulations and have reproduced a lifetime map for an mc-Si wafer. |
doi_str_mv | 10.1093/jmicro/dfs050 |
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In this technique, the electron beam from a scanning transmission electron microscope was on-off modulated while the sample was scanned. The resulting transient EBIC was analyzed to form a lifetime map. An analytical function was introduced as part of the analysis in determining this map. We have verified this approach using numerical simulations and have reproduced a lifetime map for an mc-Si wafer.</description><identifier>ISSN: 0022-0744</identifier><identifier>EISSN: 1477-9986</identifier><identifier>EISSN: 2050-5701</identifier><identifier>DOI: 10.1093/jmicro/dfs050</identifier><identifier>PMID: 22717792</identifier><language>eng</language><publisher>Japan: Oxford Publishing Limited (England)</publisher><subject>Computer simulation ; Electron beams ; Electrons ; Mapping ; Mathematical analysis ; Mathematical models ; Microscopy, Electron, Scanning - methods ; Minority carriers ; Models, Theoretical ; Numerical analysis ; Scanning electron microscopy ; Silicon ; Silicon Compounds - chemistry ; Silicon wafers ; Transients and Migrants</subject><ispartof>Journal of electron microscopy, 2012-10, Vol.61 (5), p.293-298</ispartof><rights>Copyright Oxford Publishing Limited(England) Oct 2012</rights><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c354t-8f94405453d90d7031875259eb56ba5e7bdec7a8b3f400983f46f57a170c92eb3</citedby><cites>FETCH-LOGICAL-c354t-8f94405453d90d7031875259eb56ba5e7bdec7a8b3f400983f46f57a170c92eb3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,776,780,27901,27902</link.rule.ids><backlink>$$Uhttps://www.ncbi.nlm.nih.gov/pubmed/22717792$$D View this record in MEDLINE/PubMed$$Hfree_for_read</backlink></links><search><creatorcontrib>Kushida, Takuya</creatorcontrib><creatorcontrib>Tanaka, Shigeyasu</creatorcontrib><creatorcontrib>Morita, Chiaki</creatorcontrib><creatorcontrib>Tanji, Takayoshi</creatorcontrib><creatorcontrib>Ohshita, Yoshio</creatorcontrib><title>Mapping of minority carrier lifetime distributions in multicrystalline silicon using transient electron-beam-induced current</title><title>Journal of electron microscopy</title><addtitle>J Electron Microsc (Tokyo)</addtitle><description>We have used transient electron-beam-induced current (EBIC) to map minority carrier lifetime distributions in multicrystalline Silicon (mc-Si). 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source | Oxford Journals Online |
subjects | Computer simulation Electron beams Electrons Mapping Mathematical analysis Mathematical models Microscopy, Electron, Scanning - methods Minority carriers Models, Theoretical Numerical analysis Scanning electron microscopy Silicon Silicon Compounds - chemistry Silicon wafers Transients and Migrants |
title | Mapping of minority carrier lifetime distributions in multicrystalline silicon using transient electron-beam-induced current |
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