Silicon Nanocrystal OLEDs: Effect of Organic Capping Group on Performance

The synthesis of highly luminescent, colloidally‐stable and organically‐capped silicon nanocrystals (ncSi) and their incorporation into a visible wavelength organic light‐emitting diode (OLED) is reported. By substituting decyl chains with aromatic allylbenzene capping ligands and size‐selecting vis...

Full description

Saved in:
Bibliographic Details
Published in:Small (Weinheim an der Bergstrasse, Germany) Germany), 2012-12, Vol.8 (23), p.3647-3654
Main Authors: Mastronardi, Melanie L., Henderson, Eric J., Puzzo, Daniel P., Chang, Yilu, Wang, Zhi Bin, Helander, Michael G., Jeong, Junho, Kherani, Nazir P., Lu, Zhenghong, Ozin, Geoffrey A.
Format: Article
Language:English
Subjects:
Nanocrystals
Nanotechnology
Organic light emitting diodes
photoluminescence
silicon nanocrystals
size-selective precipitation
surface functionalization
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:The synthesis of highly luminescent, colloidally‐stable and organically‐capped silicon nanocrystals (ncSi) and their incorporation into a visible wavelength organic light‐emitting diode (OLED) is reported. By substituting decyl chains with aromatic allylbenzene capping ligands and size‐selecting visible emitting ncSi, superior packing density, enhanced charge transport, and an improved photoluminescence absolute quantum yield of the ncSi is obtained in the active layer of an OLED. Highly luminescent, colloidally‐stable silicon nanocrystals (ncSi) are incorporated into a visible wavelength organic light‐emitting diode (OLED). Using allylbenzene capping ligands and size‐ selection methods, superior packing density, charge transport and photoluminescence absolute quantum yields are obtained for the ncSi active layer, paving the way for surface chemistry and size‐selection methods to have a positive impact on the performance of ncSi optoelectronic devices.
ISSN:1613-6810
1613-6829
DOI:10.1002/smll.201201242