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Nonlinear anomalous Hall effect and negative magnetoresistance in a system with random Rashba field
We predict two spin-dependent transport phenomena in two-dimensional electron systems, which are induced by a spatially fluctuating Rashba spin-orbit interaction. When the electron gas is magnetized, the random Rashba interaction leads to the anomalous Hall effect. An example of such a system is a n...
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Published in: | Physical review letters 2012-11, Vol.109 (20), p.206601-206601, Article 206601 |
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Main Authors: | , , , , |
Format: | Article |
Language: | English |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
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Summary: | We predict two spin-dependent transport phenomena in two-dimensional electron systems, which are induced by a spatially fluctuating Rashba spin-orbit interaction. When the electron gas is magnetized, the random Rashba interaction leads to the anomalous Hall effect. An example of such a system is a narrow-gap magnetic semiconductor-based symmetric quantum well. We show that the anomalous Hall conductivity reveals a strongly nonlinear dependence on the magnetization, decreasing exponentially at large spin density. We also show that electron scattering from a fluctuating Rashba field in a two-dimensional nonmagnetic electron system leads to a negative magnetoresistance arising solely due to spin-dependent effects. |
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ISSN: | 0031-9007 1079-7114 |
DOI: | 10.1103/PhysRevLett.109.206601 |