Tunneling Atomic Force Microscopy Studies on Surface Growth Pits Due to Dislocations in 4H-SiC Epitaxial Layers

• Published in: Journal of electronic materials 2012-08, Vol.41 (8), p.2193-2196
• Main Authors: Ohtani, Noboru, Ushio, Shoji, Kaneko, Tadaaki, Aigo, Takashi, Katsuno, Masakazu, Fujimoto, Tatsuo, Ohashi, Wataru
• Format: Article
• Language: English
• Subjects: Atomic force microscopy; Characterization and Evaluation of Materials; Chemistry and Materials Science; Condensed matter: structure, mechanical and thermal properties; Cross-disciplinary physics: materials science; rheology; Crystal dislocations; Crystal surfaces; Defects and impurities in crystals; microstructure; Defects and impurities: doping, implantation, distribution, concentration, etc; Dislocations; Electrical properties; Electronic materials; Electronics and Microelectronics; Epitaxial layers; Exact sciences and technology; Instrumentation; Linear defects: dislocations, disclinations; Materials Science; Methods of deposition of films and coatings; film growth and epitaxy; Microscopy; Optical and Electronic Materials; Physics; Pits; Silicon carbide; Solid State Physics; Structure and morphology; thickness; Structure of solids and liquids; crystallography; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties); Theory and models of film growth; Thin film structure and morphology; Tunneling
• ISSN: 0361-5235; 1543-186X
• DOI: 10.1007/s11664-012-2133-3

The morphological and electrical properties of surface growth pits caused by dislocations in 4H-SiC epitaxial layers were characterized using tunneling atomic force microscopy. The characteristic distribution of the tip current between the metal-coated atomic force microscopy tip and the SiC was observed within a large surface growth pit caused by a threading screw dislocation. The current was highly localized inside the pit and occurred only on the inclined surface in the up-step direction near the pit bottom. This paper discusses the causes and possible mechanisms of the observed tip current distribution inside surface growth pits.