Understanding the Evolution of CdTe Buffer Layer Surfaces on ZnTe/Si(211) and GaAs(211)B During Cyclic Annealing

We present the results of a detailed study of the changes that occur on CdTe buffer layer surfaces grown on ZnTe/Si(211) and GaAs(211)B during the routine thermal cyclic annealing (TCA) process. Observations indicate that CdTe buffer layer surfaces are Te saturated when the TCA is performed under Te...

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Bibliographic Details
Published in:Journal of electronic materials 2012-10, Vol.41 (10), p.2975-2980
Main Authors: Jaime-Vasquez, M., Jacobs, R.N., Nozaki, C., Benson, J.D., Almeida, L.A., Arias, J., Pellegrino, J.
Format: Article
Language:English
Subjects:
Annealing
Buffer layers
Cadmium telluride
Cadmium tellurides
Characterization and Evaluation of Materials
Chemistry and Materials Science
Cross-disciplinary physics: materials science
rheology
Electronics and Microelectronics
Exact sciences and technology
Instrumentation
Materials Science
Methods of deposition of films and coatings
film growth and epitaxy
Methods of nanofabrication
Molecular beam epitaxy
Molecular, atomic, ion, and chemical beam epitaxy
Nanoscale materials and structures: fabrication and characterization
Nanowires
Optical and Electronic Materials
Overpressure
Physics
Quantum wires
Solid State Physics
Substrates
Topography
Zinc tellurides
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Summary:We present the results of a detailed study of the changes that occur on CdTe buffer layer surfaces grown on ZnTe/Si(211) and GaAs(211)B during the routine thermal cyclic annealing (TCA) process. Observations indicate that CdTe buffer layer surfaces are Te saturated when the TCA is performed under Te overpressure. In the absence of Te flux during the TCA step, the CdTe surface loses CdTe congruently and the typical CdTe nanowires show the presence of nodules on their surfaces. The observed changes in reflection high-energy electron diffraction patterns during TCA are explained in terms of surface chemistry and topography observations. Overall, the Te overpressure is necessary to maintain a smoother and pristine surface to continue the molecular beam epitaxy (MBE) growth.
ISSN:0361-5235
1543-186X
DOI:10.1007/s11664-012-2169-4