Growth of Lattice-Matched ZnTeSe Alloys on (100) and (211)B GaSb

A key issue with the current HgCdTe/Si system is the high dislocation density due to the large mismatch between HgCdTe and Si. An alternative system that has superior lattice matching is HgCdSe/GaSb. A buffer layer to mitigate issues with direct nucleation of HgCdSe on GaSb is ZnTe 1− x Se x . We ha...

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Bibliographic Details
Published in:Journal of electronic materials 2012-10, Vol.41 (10), p.2738-2744
Main Authors: Chai, J., Lee, K.-K., Doyle, K., Dinan, J.H., Myers, T.H.
Format: Article
Language:English
Subjects:
Alloys
Applied sciences
Cadmium compounds
Characterization and Evaluation of Materials
Chemistry and Materials Science
Condensed matter: structure, mechanical and thermal properties
Crystal lattices
Crystallography
Density
Electronics
Electronics and Microelectronics
Equations of state, phase equilibria, and phase transitions
Exact sciences and technology
General studies of phase transitions
Instrumentation
Intermetallics
Materials
Materials Science
Mercury compounds
Molecular beam epitaxy
Morphology
Nucleation
Optical and Electronic Materials
Optoelectronic devices
Physics
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Sex
Silicon
Solid State Physics
Structure and morphology
thickness
Surfaces and interfaces
thin films and whiskers (structure and nonelectronic properties)
Tellurides
Thin film structure and morphology
Zinc telluride
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Summary:A key issue with the current HgCdTe/Si system is the high dislocation density due to the large mismatch between HgCdTe and Si. An alternative system that has superior lattice matching is HgCdSe/GaSb. A buffer layer to mitigate issues with direct nucleation of HgCdSe on GaSb is ZnTe 1− x Se x . We have performed preliminary studies into the growth of lattice-matched ZnTe 1− x Se x on both (100) and (211)B GaSb. The effects of substrate orientation, substrate temperature, and growth conditions on the morphology and crystallography of ZnTe 0.99 Se 0.01 alloys were investigated. The lattice-matching condition yielded minimum root-mean-square (rms) roughness of 1.1 nm, x-ray rocking curve full-width at half-maximum (FWHM) value of ~29 arcsec, and density of nonradiative defects of mid-10 5  cm −2 as measured by imaging photoluminescence.
ISSN:0361-5235
1543-186X
DOI:10.1007/s11664-012-2054-1