Investigation for Resistive Switching by Controlling Overflow Current in Resistance Change Nonvolatile Memory

In recent years, resistance changes random access memory (RRAM) which shows reversible bistable resistance states by applied voltage has been studied as one of the alternatives of next-generation nonvolatile memory due to its excellent device characteristics including scalability, speed, and retenti...

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Bibliographic Details
Published in:IEEE transactions on nanotechnology 2012-11, Vol.11 (6), p.1122-1125
Main Authors: Ahn, Seung-Eon, Lee, Myoung-Jae, Kang, Bo Soo, Lee, Dongsoo, Kim, Chang-Jung, Kim, Dong-Sik, Chung, U-In
Format: Article
Language:English
Subjects:
Applied sciences
Circuit breakers
Conduction
Design. Technologies. Operation analysis. Testing
Devices
Electric potential
Electronic equipment and fabrication. Passive components, printed wiring boards, connectics
Electronics
Exact sciences and technology
Integrated circuit modeling
Integrated circuits
Integrated circuits by function (including memories and processors)
Nickel oxide
nonvolatile memory
Reduction
Resistance
resistance switching
Resistors
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Simulation
Switches
Switching
Switching circuits
Voltage
Voltage measurement
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Summary:In recent years, resistance changes random access memory (RRAM) which shows reversible bistable resistance states by applied voltage has been studied as one of the alternatives of next-generation nonvolatile memory due to its excellent device characteristics including scalability, speed, and retention. Here, we report on the noncharge-based NiO RRAM device characteristics with load resistor as well as the simulation results of controlled conducting filament configuration. The RRAM device with load resistor showed super performances including highly reduction of switching current (~1 order) and significantly improved switching voltage distribution (30% reduction).
ISSN:1536-125X
1941-0085
DOI:10.1109/TNANO.2012.2214788