Landau levels and magnetopolaron effect in dilute GaAs:N

The magnetic-field dependence of the energy spectrum of GaAs doped with nitrogen impurities is investigated. Our theoretical model is based on the phenomenological band anticrossing model (BAC) which we extended in order to include the magnetic field and electron–phonon interaction. Due to the highl...

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Bibliographic Details
Published in:Solid state communications 2010-09, Vol.150 (33), p.1575-1579
Main Authors: Krstajić, P.M., Peeters, F.M., Helm, M.
Format: Article
Language:English
Subjects:
A. Semiconductors
Asymmetry
Band theory
C. Impurities in semiconductors
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Cyclotron resonance
D. Cyclotron resonance
Electron states
Electron-phonon interactions
Energy levels
Exact sciences and technology
Gallium arsenide
Gallium arsenides
Magnetic fields
Magnetooptical effects
Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation
Optical properties of bulk materials and thin films
Physics
Polarons and electron-phonon interactions
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Summary:The magnetic-field dependence of the energy spectrum of GaAs doped with nitrogen impurities is investigated. Our theoretical model is based on the phenomenological band anticrossing model (BAC) which we extended in order to include the magnetic field and electron–phonon interaction. Due to the highly localized nature of the nitrogen state, we find that the energy levels are very different from those of pure GaAs. The polaron correction results in a lower cyclotron resonance energy as compared to pure GaAs. The magneto-absorption spectrum exhibits series of asymmetric peaks close to the cyclotron energy ħ ω c .
ISSN:0038-1098
1879-2766
DOI:10.1016/j.ssc.2010.05.044