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Surface-diffusion induced growth of ZnO nanowires
The growth rate of ZnO nanowires grown epitaxially on GaN/sapphire substrates is studied. An inverse proportional relation between diameter and length of the nanowires is observed, i.e., nanowires with smaller diameters grow faster than larger ones. This unexpected result is attributed to surface di...
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| Published in: | Journal of crystal growth 2009-05, Vol.311 (11), p.3216-3219 |
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| Main Authors: | , , |
| Format: | Article |
| Language: | English |
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| cites | cdi_FETCH-LOGICAL-c375t-94a9bb55cc77bbf14cd3ab0f695064c5a122b1f32a49b8cd640f8850cef48c983 |
| container_end_page | 3219 |
| container_issue | 11 |
| container_start_page | 3216 |
| container_title | Journal of crystal growth |
| container_volume | 311 |
| creator | Kim, D.S. Gösele, U. Zacharias, M. |
| description | The growth rate of ZnO nanowires grown epitaxially on GaN/sapphire substrates is studied. An inverse proportional relation between diameter and length of the nanowires is observed, i.e., nanowires with smaller diameters grow faster than larger ones. This unexpected result is attributed to surface diffusion of ZnO admolecules along the sidewalls of the nanowires. In addition, the unique
c-axis growth of ZnO nanowires, which does not require a catalytic particle at the tip of the growing nanowires is discussed by taking into account polarity, surface free energy, and ionicity. Activation energies of the nanowire growth are determined as well. |
| doi_str_mv | 10.1016/j.jcrysgro.2009.03.026 |
| format | article |
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c-axis growth of ZnO nanowires, which does not require a catalytic particle at the tip of the growing nanowires is discussed by taking into account polarity, surface free energy, and ionicity. Activation energies of the nanowire growth are determined as well.</description><identifier>ISSN: 0022-0248</identifier><identifier>EISSN: 1873-5002</identifier><identifier>DOI: 10.1016/j.jcrysgro.2009.03.026</identifier><identifier>CODEN: JCRGAE</identifier><language>eng</language><publisher>Amsterdam: Elsevier B.V</publisher><subject>A1. Nanowires ; A3. Vapor phase epitaxy ; B1. Zinc oxide ; B2. Semiconducting II–VI materials ; Cross-disciplinary physics: materials science; rheology ; Crystal growth ; Epitaxial growth ; Exact sciences and technology ; Free energy ; Gallium nitrides ; Inverse ; Materials science ; Methods of crystal growth; physics of crystal growth ; Methods of nanofabrication ; Nanoscale materials and structures: fabrication and characterization ; Nanowires ; Other topics in nanoscale materials and structures ; Physics ; Polarity ; Quantum wires ; Theory and models of crystal growth; physics of crystal growth, crystal morphology and orientation ; Zinc oxide</subject><ispartof>Journal of crystal growth, 2009-05, Vol.311 (11), p.3216-3219</ispartof><rights>2009 Elsevier B.V.</rights><rights>2009 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c375t-94a9bb55cc77bbf14cd3ab0f695064c5a122b1f32a49b8cd640f8850cef48c983</citedby><cites>FETCH-LOGICAL-c375t-94a9bb55cc77bbf14cd3ab0f695064c5a122b1f32a49b8cd640f8850cef48c983</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27922,27923</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=21657132$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Kim, D.S.</creatorcontrib><creatorcontrib>Gösele, U.</creatorcontrib><creatorcontrib>Zacharias, M.</creatorcontrib><title>Surface-diffusion induced growth of ZnO nanowires</title><title>Journal of crystal growth</title><description>The growth rate of ZnO nanowires grown epitaxially on GaN/sapphire substrates is studied. An inverse proportional relation between diameter and length of the nanowires is observed, i.e., nanowires with smaller diameters grow faster than larger ones. This unexpected result is attributed to surface diffusion of ZnO admolecules along the sidewalls of the nanowires. In addition, the unique
c-axis growth of ZnO nanowires, which does not require a catalytic particle at the tip of the growing nanowires is discussed by taking into account polarity, surface free energy, and ionicity. Activation energies of the nanowire growth are determined as well.</description><subject>A1. Nanowires</subject><subject>A3. Vapor phase epitaxy</subject><subject>B1. Zinc oxide</subject><subject>B2. Semiconducting II–VI materials</subject><subject>Cross-disciplinary physics: materials science; rheology</subject><subject>Crystal growth</subject><subject>Epitaxial growth</subject><subject>Exact sciences and technology</subject><subject>Free energy</subject><subject>Gallium nitrides</subject><subject>Inverse</subject><subject>Materials science</subject><subject>Methods of crystal growth; physics of crystal growth</subject><subject>Methods of nanofabrication</subject><subject>Nanoscale materials and structures: fabrication and characterization</subject><subject>Nanowires</subject><subject>Other topics in nanoscale materials and structures</subject><subject>Physics</subject><subject>Polarity</subject><subject>Quantum wires</subject><subject>Theory and models of crystal growth; physics of crystal growth, crystal morphology and orientation</subject><subject>Zinc oxide</subject><issn>0022-0248</issn><issn>1873-5002</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2009</creationdate><recordtype>article</recordtype><recordid>eNqFkD1PwzAQhi0EEqXwF1AWJJaEsx07yQaq-JIqdQAWFsu52OCoTYqdUPXf46qFleVued73dA8hlxQyClTetFmLfhs-fJ8xgCoDngGTR2RCy4KnAoAdk0mcLAWWl6fkLIQWICYpTAh9Gb3VaNLGWTsG13eJ65oRTZPEws3wmfQ2ee8WSae7fuO8CefkxOplMBeHPSVvD_evs6d0vnh8nt3NU-SFGNIq11VdC4FYFHVtaY4N1zVYWQmQOQpNGaup5UznVV1iI3OwZSkAjc1LrEo-Jdf73rXvv0YTBrVyAc1yqTvTj0FRJmWRi4LxiMo9ir4PwRur1t6ttN8qCmrnSLXq15HaOVLAVXQUg1eHGzqgXlqvO3ThL82oFAXlLHK3e87Eh7-d8SqgM120FI3goJre_XfqB42igA0</recordid><startdate>20090515</startdate><enddate>20090515</enddate><creator>Kim, D.S.</creator><creator>Gösele, U.</creator><creator>Zacharias, M.</creator><general>Elsevier B.V</general><general>Elsevier</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SR</scope><scope>7U5</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope><scope>L7M</scope></search><sort><creationdate>20090515</creationdate><title>Surface-diffusion induced growth of ZnO nanowires</title><author>Kim, D.S. ; Gösele, U. ; Zacharias, M.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c375t-94a9bb55cc77bbf14cd3ab0f695064c5a122b1f32a49b8cd640f8850cef48c983</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2009</creationdate><topic>A1. Nanowires</topic><topic>A3. Vapor phase epitaxy</topic><topic>B1. Zinc oxide</topic><topic>B2. Semiconducting II–VI materials</topic><topic>Cross-disciplinary physics: materials science; rheology</topic><topic>Crystal growth</topic><topic>Epitaxial growth</topic><topic>Exact sciences and technology</topic><topic>Free energy</topic><topic>Gallium nitrides</topic><topic>Inverse</topic><topic>Materials science</topic><topic>Methods of crystal growth; physics of crystal growth</topic><topic>Methods of nanofabrication</topic><topic>Nanoscale materials and structures: fabrication and characterization</topic><topic>Nanowires</topic><topic>Other topics in nanoscale materials and structures</topic><topic>Physics</topic><topic>Polarity</topic><topic>Quantum wires</topic><topic>Theory and models of crystal growth; physics of crystal growth, crystal morphology and orientation</topic><topic>Zinc oxide</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Kim, D.S.</creatorcontrib><creatorcontrib>Gösele, U.</creatorcontrib><creatorcontrib>Zacharias, M.</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Engineered Materials Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Journal of crystal growth</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Kim, D.S.</au><au>Gösele, U.</au><au>Zacharias, M.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Surface-diffusion induced growth of ZnO nanowires</atitle><jtitle>Journal of crystal growth</jtitle><date>2009-05-15</date><risdate>2009</risdate><volume>311</volume><issue>11</issue><spage>3216</spage><epage>3219</epage><pages>3216-3219</pages><issn>0022-0248</issn><eissn>1873-5002</eissn><coden>JCRGAE</coden><abstract>The growth rate of ZnO nanowires grown epitaxially on GaN/sapphire substrates is studied. An inverse proportional relation between diameter and length of the nanowires is observed, i.e., nanowires with smaller diameters grow faster than larger ones. This unexpected result is attributed to surface diffusion of ZnO admolecules along the sidewalls of the nanowires. In addition, the unique
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| ispartof | Journal of crystal growth, 2009-05, Vol.311 (11), p.3216-3219 |
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| language | eng |
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| source | Elsevier |
| subjects | A1. Nanowires A3. Vapor phase epitaxy B1. Zinc oxide B2. Semiconducting II–VI materials Cross-disciplinary physics: materials science rheology Crystal growth Epitaxial growth Exact sciences and technology Free energy Gallium nitrides Inverse Materials science Methods of crystal growth physics of crystal growth Methods of nanofabrication Nanoscale materials and structures: fabrication and characterization Nanowires Other topics in nanoscale materials and structures Physics Polarity Quantum wires Theory and models of crystal growth physics of crystal growth, crystal morphology and orientation Zinc oxide |
| title | Surface-diffusion induced growth of ZnO nanowires |
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