Photoluminescence study of hydrogen donors in ZnO

A photoluminescence study of hydrogenated ZnO bulk crystals is presented. Two excitonic recombination lines at 3362.8 and 3360.1 meV are assigned to hydrogen shallow donors. Experimental evidence is presented that the corresponding donor to the line at 3362.8 meV, previously labeled I 4 , originates...

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Bibliographic Details
Published in:Physica. B, Condensed matter Condensed matter, 2009-12, Vol.404 (22), p.4349-4353
Main Authors: Herklotz, F., Lavrov, E.V., Weber, J.
Format: Article
Language:English
Subjects:
Bonding
Condensed matter
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Crystals
Donor
Exact sciences and technology
Hydrogen
Hydrogen storage
Ii-vi semiconductors
Ionization
Lattice vacancies
Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation
Photoluminescence
Physics
Zinc oxide
ZnO
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Summary:A photoluminescence study of hydrogenated ZnO bulk crystals is presented. Two excitonic recombination lines at 3362.8 and 3360.1 meV are assigned to hydrogen shallow donors. Experimental evidence is presented that the corresponding donor to the line at 3362.8 meV, previously labeled I 4 , originates from hydrogen trapped within the oxygen vacancy, H O . The line at 3360.1 meV was found to be due to hydrogen located at the bond-centered lattice site, H BC . The corresponding shallow donor has an ionization energy of 53 meV.
ISSN:0921-4526
1873-2135
DOI:10.1016/j.physb.2009.09.031