AlGaAs/InGaP interfaces in structures prepared by MOVPE

• Published in: Journal of crystal growth 2009-05, Vol.311 (11), p.3123-3129
• Main Authors: KUDELA, Robert, KUCERA, Michal, DOBROCKA, Edmund, SOLTYS, Jan
• Format: Article
• Language: English
• Subjects: A1. Interfaces; A3. Metalorganic vapor phase epitaxy; Aluminum gallium arsenides; Atomic structure; B2. Semiconducting aluminum compounds; B2. Semiconducting gallium compounds; B2. Semiconducting indium gallium phosphide; Condensed matter: electronic structure, electrical, magnetic, and optical properties; Conduction band; Cross-disciplinary physics: materials science; rheology; Discontinuity; Exact sciences and technology; Materials science; Methods of deposition of films and coatings; film growth and epitaxy; Offsets; Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation; Photoluminescence; Physics; Vapor phase epitaxy; growth from vapor phase; X-rays
• ISSN: 0022-0248; 1873-5002
• DOI: 10.1016/j.jcrysgro.2009.03.004

Al 0.3Ga 0.7As/In 1− x Ga x P structures were prepared by low-pressure MOVPE. Lattice matched and strained ones with top In 1− x Ga x P layers as well as reverse ones with top Al 0,3Ga 0,7As layers were examined. The structures were studied by photoluminescence, X-ray and atomic force microscope (AFM) methods. An additional photoluminescence peak from the Al 0.3Ga 0.7As/In 1− x Ga x P interface was observed in our samples and it was attributed to a type-II band offset. A conduction band offset of 0.121 eV was measured in the Al 0.3Ga 0.7As/In 0.485Ga 0.515P lattice-matched structure and a linear dependence of the conduction band offset on In 1− x Ga x P composition, with a zero offset in the Al 0.3Ga 0.7As/In 0.315Ga 0.685P structure, was determined. The valence band discontinuity had a nearly constant value of 0.152 eV.