Mid-Infrared HgTe/As2S3 Field Effect Transistors and Photodetectors

HgTe colloidal quantum dots (CQD) in an inorganic As2S3 matrix allow 100‐fold higher mobility with optimized transport properties compared to HgTe‐organic CQD film while remaining intrinsic. The material's electronic properties are measured by field effect transistors as a function of temperatu...

Full description

Saved in:
Bibliographic Details
Published in:Advanced materials (Weinheim) 2013-01, Vol.25 (1), p.137-141
Main Authors: Lhuillier, Emmanuel, Keuleyan, Sean, Zolotavin, Pavlo, Guyot-Sionnest, Philippe
Format: Article
Language:English
Subjects:
As2S3
colloidal quantum dot
field effect transistors
HgTe
inorganic matrix
mid-IR
photodetection
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:HgTe colloidal quantum dots (CQD) in an inorganic As2S3 matrix allow 100‐fold higher mobility with optimized transport properties compared to HgTe‐organic CQD film while remaining intrinsic. The material's electronic properties are measured by field effect transistors as a function of temperature and the responsivity and detectivity of the mid‐IR photoconductors are discussed.
ISSN:0935-9648
1521-4095
DOI:10.1002/adma.201203012