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Thermally stimulated current spectroscopy applied on defect characterization in semi-insulating Cd0.9Zn0.1Te
Defects exhibiting trapping behaviors in semi-insulating (SI) materials were investigated by thermally stimulated current (TSC) spectroscopy. The variation of measurement conditions during the initial photoexcitation and thermal emission, such as the heating rate, bias voltage, illumination time and...
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| Published in: | Journal of crystal growth 2012-12, Vol.361, p.25-29 |
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| cited_by | cdi_FETCH-LOGICAL-c305t-991ffefa43cb43b5da9a06b849ac71ae30f6f3b51ecee9089c06b17f636edeb33 |
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| cites | cdi_FETCH-LOGICAL-c305t-991ffefa43cb43b5da9a06b849ac71ae30f6f3b51ecee9089c06b17f636edeb33 |
| container_end_page | 29 |
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| container_title | Journal of crystal growth |
| container_volume | 361 |
| creator | Nan, Ruihua Jie, Wanqi Zha, Gangqiang Wang, Bei Yu, Hui |
| description | Defects exhibiting trapping behaviors in semi-insulating (SI) materials were investigated by thermally stimulated current (TSC) spectroscopy. The variation of measurement conditions during the initial photoexcitation and thermal emission, such as the heating rate, bias voltage, illumination time and delay time, may bring some significant effects on TSC spectra, leading to incomplete characterization of trap levels. In this work, defects with deep levels in the band gap of SI-Cd0.9Zn0.1Te crystal, grown by the modified vertical Bridgman (MVB) method, were studied via TSC measurements. TSC measurement of the SI-CZT sample was performed with the optimized measurement conditions. Ten different traps and a deep donor (EDD) level were characterized from the as-obtained spectrum in the temperature range from 25 to 310K with the aid of simultaneous multiple peak analysis (SIMPA). The origins of these traps were identified in detail as well.
► Defects as trapping centers for SI-CZT material were evaluated by TSC spectroscopy. ► The effects of four different measurement conditions on TSC spectra were analyzed. ► All observed defects of SI-CZT were characterized with SIMPA fitting. |
| doi_str_mv | 10.1016/j.jcrysgro.2012.09.001 |
| format | article |
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► Defects as trapping centers for SI-CZT material were evaluated by TSC spectroscopy. ► The effects of four different measurement conditions on TSC spectra were analyzed. ► All observed defects of SI-CZT were characterized with SIMPA fitting.</description><identifier>ISSN: 0022-0248</identifier><identifier>EISSN: 1873-5002</identifier><identifier>DOI: 10.1016/j.jcrysgro.2012.09.001</identifier><identifier>CODEN: JCRGAE</identifier><language>eng</language><publisher>Amsterdam: Elsevier B.V</publisher><subject>A1. Characterization ; A1. Defects ; A2. Bridgman technique ; B1. Cadmium compounds ; B2. Semiconducting cadmium compounds ; B2. Semiconducting II–VI materials ; Bridgman method ; Cross-disciplinary physics: materials science; rheology ; Crystal defects ; Crystal growth ; Exact sciences and technology ; Growth from melts; zone melting and refining ; Materials science ; Methods of crystal growth; physics of crystal growth ; Physics ; Spectral emissivity ; Spectroscopy ; Thermal emission ; Thermally stimulated current ; Voltage</subject><ispartof>Journal of crystal growth, 2012-12, Vol.361, p.25-29</ispartof><rights>2012 Elsevier B.V.</rights><rights>2014 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c305t-991ffefa43cb43b5da9a06b849ac71ae30f6f3b51ecee9089c06b17f636edeb33</citedby><cites>FETCH-LOGICAL-c305t-991ffefa43cb43b5da9a06b849ac71ae30f6f3b51ecee9089c06b17f636edeb33</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27924,27925</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=26640380$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Nan, Ruihua</creatorcontrib><creatorcontrib>Jie, Wanqi</creatorcontrib><creatorcontrib>Zha, Gangqiang</creatorcontrib><creatorcontrib>Wang, Bei</creatorcontrib><creatorcontrib>Yu, Hui</creatorcontrib><title>Thermally stimulated current spectroscopy applied on defect characterization in semi-insulating Cd0.9Zn0.1Te</title><title>Journal of crystal growth</title><description>Defects exhibiting trapping behaviors in semi-insulating (SI) materials were investigated by thermally stimulated current (TSC) spectroscopy. The variation of measurement conditions during the initial photoexcitation and thermal emission, such as the heating rate, bias voltage, illumination time and delay time, may bring some significant effects on TSC spectra, leading to incomplete characterization of trap levels. In this work, defects with deep levels in the band gap of SI-Cd0.9Zn0.1Te crystal, grown by the modified vertical Bridgman (MVB) method, were studied via TSC measurements. TSC measurement of the SI-CZT sample was performed with the optimized measurement conditions. Ten different traps and a deep donor (EDD) level were characterized from the as-obtained spectrum in the temperature range from 25 to 310K with the aid of simultaneous multiple peak analysis (SIMPA). The origins of these traps were identified in detail as well.
► Defects as trapping centers for SI-CZT material were evaluated by TSC spectroscopy. ► The effects of four different measurement conditions on TSC spectra were analyzed. ► All observed defects of SI-CZT were characterized with SIMPA fitting.</description><subject>A1. Characterization</subject><subject>A1. Defects</subject><subject>A2. Bridgman technique</subject><subject>B1. Cadmium compounds</subject><subject>B2. Semiconducting cadmium compounds</subject><subject>B2. Semiconducting II–VI materials</subject><subject>Bridgman method</subject><subject>Cross-disciplinary physics: materials science; rheology</subject><subject>Crystal defects</subject><subject>Crystal growth</subject><subject>Exact sciences and technology</subject><subject>Growth from melts; zone melting and refining</subject><subject>Materials science</subject><subject>Methods of crystal growth; physics of crystal growth</subject><subject>Physics</subject><subject>Spectral emissivity</subject><subject>Spectroscopy</subject><subject>Thermal emission</subject><subject>Thermally stimulated current</subject><subject>Voltage</subject><issn>0022-0248</issn><issn>1873-5002</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2012</creationdate><recordtype>article</recordtype><recordid>eNqFkE9v2zAMxYVhBZZ1-wqDLwN2sUtZjmLdNgT7U6DALtmlF4GhqVaBLHuSMyD99FWQbtddJIDv8ZH8CfFBQiNB6ptDc6B0yg9palqQbQOmAZCvxEr2G1WvAdrXYlXetoa269-ItzkfoDi0hJUIu0dOI4ZwqvLix2PAhYeKjilxXKo8My1pyjTNpwrnOfgiTrEa2BWhokdMSAsn_4SLL3Ufq8yjr33M5yQfH6rtAI25j2XXHb8TVw5D5vcv_7X49e3rbvujvvv5_Xb75a4mBeulNkY6xw47RftO7dcDGgS97zuDtJHICpx2pS6ZmA30hooqN04rzQPvlboWny65c5p-HzkvdvSZOASMPB2zlW2v9Lrv4GzVFyuVM3NiZ-fkR0wnK8Ge8dqD_YvXnvFaMLbAK40fX2ZgJgwuYSSf_3W3Wpf4Horv88XH5eA_npPN5DkSDz4VhnaY_P9GPQOMbJbH</recordid><startdate>20121215</startdate><enddate>20121215</enddate><creator>Nan, Ruihua</creator><creator>Jie, Wanqi</creator><creator>Zha, Gangqiang</creator><creator>Wang, Bei</creator><creator>Yu, Hui</creator><general>Elsevier B.V</general><general>Elsevier</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SR</scope><scope>7U5</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope><scope>L7M</scope></search><sort><creationdate>20121215</creationdate><title>Thermally stimulated current spectroscopy applied on defect characterization in semi-insulating Cd0.9Zn0.1Te</title><author>Nan, Ruihua ; Jie, Wanqi ; Zha, Gangqiang ; Wang, Bei ; Yu, Hui</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c305t-991ffefa43cb43b5da9a06b849ac71ae30f6f3b51ecee9089c06b17f636edeb33</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2012</creationdate><topic>A1. Characterization</topic><topic>A1. Defects</topic><topic>A2. Bridgman technique</topic><topic>B1. Cadmium compounds</topic><topic>B2. Semiconducting cadmium compounds</topic><topic>B2. Semiconducting II–VI materials</topic><topic>Bridgman method</topic><topic>Cross-disciplinary physics: materials science; rheology</topic><topic>Crystal defects</topic><topic>Crystal growth</topic><topic>Exact sciences and technology</topic><topic>Growth from melts; zone melting and refining</topic><topic>Materials science</topic><topic>Methods of crystal growth; physics of crystal growth</topic><topic>Physics</topic><topic>Spectral emissivity</topic><topic>Spectroscopy</topic><topic>Thermal emission</topic><topic>Thermally stimulated current</topic><topic>Voltage</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Nan, Ruihua</creatorcontrib><creatorcontrib>Jie, Wanqi</creatorcontrib><creatorcontrib>Zha, Gangqiang</creatorcontrib><creatorcontrib>Wang, Bei</creatorcontrib><creatorcontrib>Yu, Hui</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Engineered Materials Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Journal of crystal growth</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Nan, Ruihua</au><au>Jie, Wanqi</au><au>Zha, Gangqiang</au><au>Wang, Bei</au><au>Yu, Hui</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Thermally stimulated current spectroscopy applied on defect characterization in semi-insulating Cd0.9Zn0.1Te</atitle><jtitle>Journal of crystal growth</jtitle><date>2012-12-15</date><risdate>2012</risdate><volume>361</volume><spage>25</spage><epage>29</epage><pages>25-29</pages><issn>0022-0248</issn><eissn>1873-5002</eissn><coden>JCRGAE</coden><abstract>Defects exhibiting trapping behaviors in semi-insulating (SI) materials were investigated by thermally stimulated current (TSC) spectroscopy. The variation of measurement conditions during the initial photoexcitation and thermal emission, such as the heating rate, bias voltage, illumination time and delay time, may bring some significant effects on TSC spectra, leading to incomplete characterization of trap levels. In this work, defects with deep levels in the band gap of SI-Cd0.9Zn0.1Te crystal, grown by the modified vertical Bridgman (MVB) method, were studied via TSC measurements. TSC measurement of the SI-CZT sample was performed with the optimized measurement conditions. Ten different traps and a deep donor (EDD) level were characterized from the as-obtained spectrum in the temperature range from 25 to 310K with the aid of simultaneous multiple peak analysis (SIMPA). The origins of these traps were identified in detail as well.
► Defects as trapping centers for SI-CZT material were evaluated by TSC spectroscopy. ► The effects of four different measurement conditions on TSC spectra were analyzed. ► All observed defects of SI-CZT were characterized with SIMPA fitting.</abstract><cop>Amsterdam</cop><pub>Elsevier B.V</pub><doi>10.1016/j.jcrysgro.2012.09.001</doi><tpages>5</tpages></addata></record> |
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| language | eng |
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| subjects | A1. Characterization A1. Defects A2. Bridgman technique B1. Cadmium compounds B2. Semiconducting cadmium compounds B2. Semiconducting II–VI materials Bridgman method Cross-disciplinary physics: materials science rheology Crystal defects Crystal growth Exact sciences and technology Growth from melts zone melting and refining Materials science Methods of crystal growth physics of crystal growth Physics Spectral emissivity Spectroscopy Thermal emission Thermally stimulated current Voltage |
| title | Thermally stimulated current spectroscopy applied on defect characterization in semi-insulating Cd0.9Zn0.1Te |
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