Broadband NIR emission in novel sol-gel Er3+-doped SiO2aNb2O5 glass ceramic planar waveguides for photonic applications

This paper reports on the sol-gel preparation and structural and optical characterization of new Er3+-doped SiO2aNb2O5 nanocomposite planar waveguides. Erbium-doped (100-x)SiO2axNb2O5 waveguides were deposited on silica-on-silicon substrates and Si(1 0 0) by the dip-coating technique. The waveguides...

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Bibliographic Details
Published in:Optical materials 2013-01, Vol.35 (3), p.387-396
Main Authors: Aquino, Felipe Thomaz, Ferrari, Jefferson Luis, Ribeiro, Sidney Jose Lima, Ferrier, Alban, Goldner, Philippe, Goncalves, Rogeria Rocha
Format: Article
Language:English
Subjects:
Dip coatings
Infrared
Nanocomposites
Nanomaterials
Nanostructure
Planar waveguides
Silicon dioxide
Waveguides
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Summary:This paper reports on the sol-gel preparation and structural and optical characterization of new Er3+-doped SiO2aNb2O5 nanocomposite planar waveguides. Erbium-doped (100-x)SiO2axNb2O5 waveguides were deposited on silica-on-silicon substrates and Si(1 0 0) by the dip-coating technique. The waveguides exhibited uniform refractive index distribution across the thickness, efficient light injection at 1538 nm, and low losses at 632 and 1538 nm. The band-gap values lied between 4.12 eV and 3.55 eV for W1aW5, respectively, showing an excellent transparency in the visible and near infrared region for the waveguides. Fourier Transform Infrared (FTIR) Spectroscopy analysis evidenced SiO2aNb2O5 nanocomposite formation with controlled phase separation in the films. The HRTEM and XRD analyses revealed Nb2O5 orthorhombic T-phase nanocrystals dispersed in a silica-based host. Photoluminescence (PL) analysis showed a broad band emission at 1531 nm, assigned to the 4I13/2 a 4I15/2 transition of the Er3+ ions present in the nanocomposite, with a full-width at half medium of 48a68 nm, depending on the niobium content and annealing. Hence, these waveguides are excellent candidates for application in integrated optics, especially in EDWA and WDM devices.
ISSN:0925-3467