Influence of storage time on laser cleaning of SiO2 on Si

The influence of the 'storage time' *ts on the threshold fluence *qcl and the efficiency in dry laser cleaning is investigated. *ts denotes the time between the deposition of particles and the cleaning. As a model system we employed silica spheres with diameters of 500 nm and 1500 nm on co...

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Bibliographic Details
Published in:Applied physics. A, Materials science & processing Materials science & processing, 2003-03, Vol.76 (5), p.847-849
Main Authors: Schrems, G, Delamare, M P, Arnold, N, Leiderer, P, Bauerle, D
Format: Article
Language:English
Subjects:
Cleaning
Deposition
Drying
Fluence
Lasers
Silicon
Silicon dioxide
Thresholds
Online Access:Get full text
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Summary:The influence of the 'storage time' *ts on the threshold fluence *qcl and the efficiency in dry laser cleaning is investigated. *ts denotes the time between the deposition of particles and the cleaning. As a model system we employed silica spheres with diameters of 500 nm and 1500 nm on commercial silicon wafers and single-pulse KrF excimer laser radiation (*tFWHM=28 ns). For the 1500-nm silica spheres, *qcl was found to increase from about 65 mJ/cm to 125 mJ/cm for storage times of 4 h and 362 h, respectively. For 500-nm silica spheres the increase in the threshold fluence was less than 20% for storage times up to 386 h.
ISSN:0947-8396
1432-0630
DOI:10.1007/s00339-002-1761-5