Diode-pumped passively mode-locked Nd:GdVO4 laser with a GaAs saturable absorber mirror

We report on a diode end-pumped passively mode-locked Nd:GdVO4 laser. By using a GaAs wafer simultaneously as the saturable absorber and the output coupler, stable continuous-wave mode locking was achieved. The pulse width was measured to be 18.9 picoseconds at a repetition rate of 370 MHz. The most...

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Bibliographic Details
Published in:Applied physics. B, Lasers and optics Lasers and optics, 2004-07, Vol.79 (2), p.203-206
Main Authors: KONG, J, TANG, D. Y, NG, S. P, ZHAO, B, QIN, L. J, MENG, X. L
Format: Article
Language:English
Subjects:
Diode-pumped lasers
Diodes
Doped-insulator lasers and other solid state lasers
Exact sciences and technology
Fundamental areas of phenomenology (including applications)
Gallium arsenide
Gallium arsenides
Holes
Laser optical systems: design and operation
Lasers
Modulation, tuning, and mode locking
Optics
Physics
Pumps
Repetition
Wafers
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Summary:We report on a diode end-pumped passively mode-locked Nd:GdVO4 laser. By using a GaAs wafer simultaneously as the saturable absorber and the output coupler, stable continuous-wave mode locking was achieved. The pulse width was measured to be 18.9 picoseconds at a repetition rate of 370 MHz. The most remarkable property of the laser is that its repetition rate can be changed from 370 MHz to 3.348 GHz by simply changing the cavity length. An average output power of 3.46 W at a 3.348 GHz repetition rate was obtained with a 14 W pump power. To our knowledge, this is the first demonstration of a passively mode-locked Nd:GdVO4 laser using a GaAs wafer as the saturable absorber.
ISSN:0946-2171
1432-0649
DOI:10.1007/s00340-004-1539-x