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Low threshold field electron emission from solvothermally synthesized WO2.72 nanowires
Field emission studies of WO 2.72 nanowires synthesized by a solvothermal method have been performed in the planar diode configuration under ultra high vacuum conditions. Fowler–Nordheim plots obtained from the current-voltage characteristics follow the quantum mechanical tunneling process and a cur...
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Published in: | Applied physics. A, Materials science & processing Materials science & processing, 2010-03, Vol.98 (4), p.751-756 |
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container_title | Applied physics. A, Materials science & processing |
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creator | Late, Dattatray J. Kashid, Ranjit V. Sekhar Rout, Chandra More, Mahendra A. Joag, Dilip S. |
description | Field emission studies of WO
2.72
nanowires synthesized by a solvothermal method have been performed in the planar diode configuration under ultra high vacuum conditions. Fowler–Nordheim plots obtained from the current-voltage characteristics follow the quantum mechanical tunneling process and a current density of ∼8.3×10
6
μA/cm
2
can be drawn at an applied electric field of 2 V/μm. The field enhancement factor is 33025, while the turn-on field is only 1.4 V/μm. The emission current-time plot recorded at the pre-set value of emission current of 1 μA over a period of more than 3 h exhibits an initial increase and a subsequent stabilization of the emission current. The results reveal that the WO
2.72
nanowire emitters synthesized by the solvothermal method are promising cathode materials for practical applications. |
doi_str_mv | 10.1007/s00339-009-5536-0 |
format | article |
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2.72
nanowires synthesized by a solvothermal method have been performed in the planar diode configuration under ultra high vacuum conditions. Fowler–Nordheim plots obtained from the current-voltage characteristics follow the quantum mechanical tunneling process and a current density of ∼8.3×10
6
μA/cm
2
can be drawn at an applied electric field of 2 V/μm. The field enhancement factor is 33025, while the turn-on field is only 1.4 V/μm. The emission current-time plot recorded at the pre-set value of emission current of 1 μA over a period of more than 3 h exhibits an initial increase and a subsequent stabilization of the emission current. The results reveal that the WO
2.72
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2.72
nanowires synthesized by a solvothermal method have been performed in the planar diode configuration under ultra high vacuum conditions. Fowler–Nordheim plots obtained from the current-voltage characteristics follow the quantum mechanical tunneling process and a current density of ∼8.3×10
6
μA/cm
2
can be drawn at an applied electric field of 2 V/μm. The field enhancement factor is 33025, while the turn-on field is only 1.4 V/μm. The emission current-time plot recorded at the pre-set value of emission current of 1 μA over a period of more than 3 h exhibits an initial increase and a subsequent stabilization of the emission current. The results reveal that the WO
2.72
nanowire emitters synthesized by the solvothermal method are promising cathode materials for practical applications.</description><subject>Characterization and Evaluation of Materials</subject><subject>Condensed Matter Physics</subject><subject>Condensed matter: electronic structure, electrical, magnetic, and optical properties</subject><subject>Diodes</subject><subject>Electron and ion emission by liquids and solids; impact phenomena</subject><subject>Emission</subject><subject>Exact sciences and technology</subject><subject>Field emission</subject><subject>Field emission, ionization, evaporation, and desorption</subject><subject>High vacuum</subject><subject>Machines</subject><subject>Manufacturing</subject><subject>Nanotechnology</subject><subject>Nanowires</subject><subject>Optical and Electronic Materials</subject><subject>Physics</subject><subject>Physics and Astronomy</subject><subject>Processes</subject><subject>Quantum mechanics</subject><subject>Stabilization</subject><subject>Surfaces and Interfaces</subject><subject>Thin Films</subject><subject>Thresholds</subject><issn>0947-8396</issn><issn>1432-0630</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2010</creationdate><recordtype>article</recordtype><recordid>eNp9UMtOwzAQtBBIlMIHcMsFiUvK2k7s-IgQL6kSFx5Hy0k2NMiNizcFla_H0Ioje9iHdma0O4ydcphxAH1BAFKaHMDkZSlVDntswgspclAS9tkETKHzShp1yI6I3iBFIcSEPc_DZzYuItIi-DbrekwZPTZjDEOGy56oT00XwzKj4D_CuMC4dN5vMtoMaaD-C9vs5UHMtMgGN4TPPokds4POecKTXZ2yp5vrx6u7fP5we391Oc-bgusxVx1HV3WmqEslnFKIRpratbUTgHXLhXJFWfMGtNayg1Yb7VRdG0zfNBpKOWXnW91VDO9rpNGmixv03g0Y1mS5qKSqRCVMgvIttImBKGJnV7FfurixHOyPh3broU0e2h8PLSTO2U7eUeN8F93Q9PRHFKIAxX_PEFscpdXwitG-hXUc0uf_iH8D-beCFQ</recordid><startdate>20100301</startdate><enddate>20100301</enddate><creator>Late, Dattatray J.</creator><creator>Kashid, Ranjit V.</creator><creator>Sekhar Rout, Chandra</creator><creator>More, Mahendra A.</creator><creator>Joag, Dilip S.</creator><general>Springer-Verlag</general><general>Springer</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7U5</scope><scope>8BQ</scope><scope>8FD</scope><scope>H8D</scope><scope>JG9</scope><scope>L7M</scope></search><sort><creationdate>20100301</creationdate><title>Low threshold field electron emission from solvothermally synthesized WO2.72 nanowires</title><author>Late, Dattatray J. ; Kashid, Ranjit V. ; Sekhar Rout, Chandra ; More, Mahendra A. ; Joag, Dilip S.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c417t-6f1ea8f94b562a66ee939badba20ebd126a45b1c07773f0d797a6bb9e947c7053</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2010</creationdate><topic>Characterization and Evaluation of Materials</topic><topic>Condensed Matter Physics</topic><topic>Condensed matter: electronic structure, electrical, magnetic, and optical properties</topic><topic>Diodes</topic><topic>Electron and ion emission by liquids and solids; impact phenomena</topic><topic>Emission</topic><topic>Exact sciences and technology</topic><topic>Field emission</topic><topic>Field emission, ionization, evaporation, and desorption</topic><topic>High vacuum</topic><topic>Machines</topic><topic>Manufacturing</topic><topic>Nanotechnology</topic><topic>Nanowires</topic><topic>Optical and Electronic Materials</topic><topic>Physics</topic><topic>Physics and Astronomy</topic><topic>Processes</topic><topic>Quantum mechanics</topic><topic>Stabilization</topic><topic>Surfaces and Interfaces</topic><topic>Thin Films</topic><topic>Thresholds</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Late, Dattatray J.</creatorcontrib><creatorcontrib>Kashid, Ranjit V.</creatorcontrib><creatorcontrib>Sekhar Rout, Chandra</creatorcontrib><creatorcontrib>More, Mahendra A.</creatorcontrib><creatorcontrib>Joag, Dilip S.</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Applied physics. A, Materials science & processing</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Late, Dattatray J.</au><au>Kashid, Ranjit V.</au><au>Sekhar Rout, Chandra</au><au>More, Mahendra A.</au><au>Joag, Dilip S.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Low threshold field electron emission from solvothermally synthesized WO2.72 nanowires</atitle><jtitle>Applied physics. A, Materials science & processing</jtitle><stitle>Appl. Phys. A</stitle><date>2010-03-01</date><risdate>2010</risdate><volume>98</volume><issue>4</issue><spage>751</spage><epage>756</epage><pages>751-756</pages><issn>0947-8396</issn><eissn>1432-0630</eissn><abstract>Field emission studies of WO
2.72
nanowires synthesized by a solvothermal method have been performed in the planar diode configuration under ultra high vacuum conditions. Fowler–Nordheim plots obtained from the current-voltage characteristics follow the quantum mechanical tunneling process and a current density of ∼8.3×10
6
μA/cm
2
can be drawn at an applied electric field of 2 V/μm. The field enhancement factor is 33025, while the turn-on field is only 1.4 V/μm. The emission current-time plot recorded at the pre-set value of emission current of 1 μA over a period of more than 3 h exhibits an initial increase and a subsequent stabilization of the emission current. The results reveal that the WO
2.72
nanowire emitters synthesized by the solvothermal method are promising cathode materials for practical applications.</abstract><cop>Berlin/Heidelberg</cop><pub>Springer-Verlag</pub><doi>10.1007/s00339-009-5536-0</doi><tpages>6</tpages></addata></record> |
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subjects | Characterization and Evaluation of Materials Condensed Matter Physics Condensed matter: electronic structure, electrical, magnetic, and optical properties Diodes Electron and ion emission by liquids and solids impact phenomena Emission Exact sciences and technology Field emission Field emission, ionization, evaporation, and desorption High vacuum Machines Manufacturing Nanotechnology Nanowires Optical and Electronic Materials Physics Physics and Astronomy Processes Quantum mechanics Stabilization Surfaces and Interfaces Thin Films Thresholds |
title | Low threshold field electron emission from solvothermally synthesized WO2.72 nanowires |
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