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Effect of Gate Voltage in Organic Phototransistors Based on Polythiophene/Fullerene Bulk Heterojunction Nanolayers
Here we report the effect of gate voltage on the performance of organic phototransistors made using bulk heterojunction films of regioregular poly(3-hexylthiophene) (P3HT) and 1-(3-methoxycarbonyl)-propyl-1-phenyl-(6,6)C 61 (PCBM). To understand the illumination effect, a monochromatic light (520 nm...
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Published in: | Molecular Crystals and Liquid Crystals 2010-01, Vol.519 (1), p.260-265 |
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container_title | Molecular Crystals and Liquid Crystals |
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creator | Nam, Sungho Hwang, Hyemin Kim, Hwajeong Kim, Youngkyoo |
description | Here we report the effect of gate voltage on the performance of organic phototransistors made using bulk heterojunction films of regioregular poly(3-hexylthiophene) (P3HT) and 1-(3-methoxycarbonyl)-propyl-1-phenyl-(6,6)C
61
(PCBM). To understand the illumination effect, a monochromatic light (520 nm) corresponded to the maximum absorption of present P3HT:PCBM blend film was employed. Results showed that the present device followed a p-type field-effect transistor in the dark and under illumination though the saturation trend of output curves became weakened under illumination. The responsivity exhibited a two-stage trend as a function of gate voltage. The maximum responsivity reached 0.13 A/W under illumination of green light at 81μW/cm
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doi_str_mv | 10.1080/15421401003603726 |
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61
(PCBM). To understand the illumination effect, a monochromatic light (520 nm) corresponded to the maximum absorption of present P3HT:PCBM blend film was employed. Results showed that the present device followed a p-type field-effect transistor in the dark and under illumination though the saturation trend of output curves became weakened under illumination. The responsivity exhibited a two-stage trend as a function of gate voltage. The maximum responsivity reached 0.13 A/W under illumination of green light at 81μW/cm
2
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61
(PCBM). To understand the illumination effect, a monochromatic light (520 nm) corresponded to the maximum absorption of present P3HT:PCBM blend film was employed. Results showed that the present device followed a p-type field-effect transistor in the dark and under illumination though the saturation trend of output curves became weakened under illumination. The responsivity exhibited a two-stage trend as a function of gate voltage. The maximum responsivity reached 0.13 A/W under illumination of green light at 81μW/cm
2
.</description><subject>Electric currents</subject><subject>Electric potential</subject><subject>Electronics</subject><subject>Gate voltage</subject><subject>Gates</subject><subject>Heterojunctions</subject><subject>Illumination</subject><subject>Nanostructure</subject><subject>organic phototransistors</subject><subject>P3HT</subject><subject>PCBM</subject><subject>Phototransistors</subject><subject>Polymer chemistry</subject><subject>Polymer films</subject><subject>Polymer processing</subject><subject>responsivity</subject><subject>saturation</subject><subject>Transistors</subject><subject>Trends</subject><subject>Voltage</subject><issn>1542-1406</issn><issn>1563-5287</issn><issn>1527-1943</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2010</creationdate><recordtype>article</recordtype><recordid>eNqFkT1vFDEQhlcIJELgB9BZVDRHxl5_rURDonwgRSQF0Fpe72zOh88-bK_C_Xt8OioiQTVTPI_nHU_XvaXwgYKGMyo4oxwoQC-hV0w-606okP1KMK2eH3rOVg2QL7tXpWwAGFdUn3T5cp7RVZJmcm0rku8pVPuAxEdylx9s9I7cr1NNNdtYfKkpF3JuC04kRXKfwr6ufdqtMeLZ1RIC5taR8yX8IDdYMafNEl31jf1iYwp2j7m87l7MNhR886eedt-uLr9e3Kxu764_X3y6XbkWs7bg4JSTA8heCEA28lE5rdhI5ShG1FywYQTWtp4mBlTxQQ5sGvSIVDhlaX_avT--u8vp54Klmq0vDkOwEdNSDGW6l1oCZw199xe6SUuOLZ3phdQDh-EA0SPkciol42x22W9t3hsK5nAE8-QIzfl4dHycU97ax5TDZKrdh5Tn9qXOtwn_0tV_9SeWqb9q_xvUlp5S</recordid><startdate>20100101</startdate><enddate>20100101</enddate><creator>Nam, Sungho</creator><creator>Hwang, Hyemin</creator><creator>Kim, Hwajeong</creator><creator>Kim, Youngkyoo</creator><general>Taylor & Francis Group</general><general>Taylor & Francis Ltd</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>7U5</scope><scope>8FD</scope><scope>L7M</scope></search><sort><creationdate>20100101</creationdate><title>Effect of Gate Voltage in Organic Phototransistors Based on Polythiophene/Fullerene Bulk Heterojunction Nanolayers</title><author>Nam, Sungho ; Hwang, Hyemin ; Kim, Hwajeong ; Kim, Youngkyoo</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c406t-520c7c69063550e2b4b7c872b16b5be84529b02214dd201749692d98be15c7a13</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2010</creationdate><topic>Electric currents</topic><topic>Electric potential</topic><topic>Electronics</topic><topic>Gate voltage</topic><topic>Gates</topic><topic>Heterojunctions</topic><topic>Illumination</topic><topic>Nanostructure</topic><topic>organic phototransistors</topic><topic>P3HT</topic><topic>PCBM</topic><topic>Phototransistors</topic><topic>Polymer chemistry</topic><topic>Polymer films</topic><topic>Polymer processing</topic><topic>responsivity</topic><topic>saturation</topic><topic>Transistors</topic><topic>Trends</topic><topic>Voltage</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Nam, Sungho</creatorcontrib><creatorcontrib>Hwang, Hyemin</creatorcontrib><creatorcontrib>Kim, Hwajeong</creatorcontrib><creatorcontrib>Kim, Youngkyoo</creatorcontrib><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Molecular Crystals and Liquid Crystals</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Nam, Sungho</au><au>Hwang, Hyemin</au><au>Kim, Hwajeong</au><au>Kim, Youngkyoo</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Effect of Gate Voltage in Organic Phototransistors Based on Polythiophene/Fullerene Bulk Heterojunction Nanolayers</atitle><jtitle>Molecular Crystals and Liquid Crystals</jtitle><date>2010-01-01</date><risdate>2010</risdate><volume>519</volume><issue>1</issue><spage>260</spage><epage>265</epage><pages>260-265</pages><issn>1542-1406</issn><eissn>1563-5287</eissn><eissn>1527-1943</eissn><abstract>Here we report the effect of gate voltage on the performance of organic phototransistors made using bulk heterojunction films of regioregular poly(3-hexylthiophene) (P3HT) and 1-(3-methoxycarbonyl)-propyl-1-phenyl-(6,6)C
61
(PCBM). To understand the illumination effect, a monochromatic light (520 nm) corresponded to the maximum absorption of present P3HT:PCBM blend film was employed. Results showed that the present device followed a p-type field-effect transistor in the dark and under illumination though the saturation trend of output curves became weakened under illumination. The responsivity exhibited a two-stage trend as a function of gate voltage. The maximum responsivity reached 0.13 A/W under illumination of green light at 81μW/cm
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source | EBSCOhost MLA International Bibliography With Full Text; Taylor and Francis Science and Technology Collection |
subjects | Electric currents Electric potential Electronics Gate voltage Gates Heterojunctions Illumination Nanostructure organic phototransistors P3HT PCBM Phototransistors Polymer chemistry Polymer films Polymer processing responsivity saturation Transistors Trends Voltage |
title | Effect of Gate Voltage in Organic Phototransistors Based on Polythiophene/Fullerene Bulk Heterojunction Nanolayers |
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