c-axis-textured LiNbO3 thin films on Si (111) substrates

• Published in: Applied physics. A, Materials science & processing Materials science & processing, 2001-10, Vol.73 (4), p.511-514
• Main Authors: CHENG, S. D, HAN, X. Q, KAM, C. H, ZHOU, Y, LAM, Y. L, OH, J. T, XU, X. W, CHONG, T. C
• Format: Article
• Language: English
• Subjects: Annealing; Condensed matter: structure, mechanical and thermal properties; Cross-disciplinary physics: materials science; rheology; Devices; Exact sciences and technology; Heating; Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids); Materials science; Methods of deposition of films and coatings; film growth and epitaxy; Orientation; Physics; Sol gel process; Structure and morphology; thickness; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties); Symmetry; Thin film structure and morphology; Thin films
• ISSN: 0947-8396; 1432-0630
• DOI: 10.1007/s003390100802

We have successfully prepared highly c-axis-textured LiNbO3 films on hydrogen-terminated Si(111) substrate using sol-gel spin-coating and rapid thermal annealing. These highly c-axis-textured films were obtained with a preheating at 300 C for 15 min followed by a rapid thermal annealing at 500--700 C for 120 s. The c-axis orientation of the LiNbO3 film is due to a weak effect caused by the 3-fold symmetry match between the film and the Si(111) substrate. The c-axis orientation of LiNbO3 films is very useful in integrated optics devices and metal--ferroelectric--semiconductor nonvolatile memory applications.