Size and density control of silicon oxide nanowires by rapid thermal annealing and their growth mechanism

• Published in: Applied physics. A, Materials science & processing Materials science & processing, 2009-02, Vol.94 (2), p.357-363
• Main Authors: Lai, Yi-Sheng, Wang, Jyh-Liang, Liou, Sz-Chian, Tu, Chia-Hsun
• Format: Article
• Language: English
• Subjects: Annealing; Characterization and Evaluation of Materials; Condensed Matter Physics; Cross-disciplinary physics: materials science; rheology; Electron energy loss spectroscopy; Exact sciences and technology; Image contrast; Machines; Manufacturing; Materials science; Nanoscale materials and structures: fabrication and characterization; Nanotechnology; Nanowires; Optical and Electronic Materials; Physics; Physics and Astronomy; Processes; Quantum wires; Scanning electron microscopy; Silicon dioxide; Surfaces and Interfaces; Thin Films; Wire
• ISSN: 0947-8396; 1432-0630
• DOI: 10.1007/s00339-008-4806-6

In this work, we demonstrate a fast approach to grow SiO 2 nanowires by rapid thermal annealing (RTA). The material characteristics of SiO 2 nanowires are investigated by field emission scanning electron microscopy, high-resolution transmission electron microscopy (HRTEM), high-angle annular dark-field (HAADF) imaging, electron energy loss spectroscopy (EELS), and energy-filtered TEM (EFTEM). The HAADF images show that the wire tip is predominantly composed of Pt with brighter contrast, while the elemental mappings in EFTEM and EELS spectra reveal that the wire consists of Si and O elements. The SiO 2 nanowires are amorphous with featureless contrast in HRTEM images after RTA at 900°C. Furthermore, the nanowire length and diameter are found to be dependent on the initial Pt film thickness. It is suggested that a high SiO 2 growth rate of >1 μm/min can be achieved by RTA, showing a promising way to enable large-area fabrication of nanowires.