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Structural and electrical properties of polycrystalline PbZr0.5Ti0.5O3 films deposited on La0.5Sr0.5CoO3 coated silicon by sol-gel process

La0.5Sr0.5CoO3 (LSCO) films have been grown on Si (100) by a metalorganic chemical liquid deposition (MOCLD) technique using lanthanum acetate, strontium acetate and cobalt acetate as the starting materials. Subsequent PbZr0.5Ti0.5O3 (PZT) films were deposited onto LSCO films by a modified sol-gel m...

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Bibliographic Details
Published in:Applied physics. A, Materials science & processing Materials science & processing, 2002-05, Vol.74 (5), p.707-710
Main Authors: WANG, G. S, MENG, X. J, LAI, Z. Q, YU, J, SUN, J. L, CHENG, J. G, TANG, J, GUO, S. L, CHU, J. H
Format: Article
Language:English
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Summary:La0.5Sr0.5CoO3 (LSCO) films have been grown on Si (100) by a metalorganic chemical liquid deposition (MOCLD) technique using lanthanum acetate, strontium acetate and cobalt acetate as the starting materials. Subsequent PbZr0.5Ti0.5O3 (PZT) films were deposited onto LSCO films by a modified sol-gel method. Field-emission scanning electron microscopy and X-ray diffraction analysis show that PZT and LSCO films are polycrystalline and entirely perovskite phase. At an applied electric field of 250 kV/cm, the Pt/PZT/LSCO capacitor shows no polarization fatigue after 3X10 switching cycles and an internal electric field; the remnant polarization Pr and the coercive field Ec are about 22 *mC/cm and 73 kV/cm, respectively. The dielectric constant of PZT films is 650 at a frequency of 1 kHz.
ISSN:0947-8396
1432-0630
DOI:10.1007/s003390100941